BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,500 pcs
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1500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The NTMFD4C820NAT1G from On Semiconductor is a 2N-channel MOSFET. This component is designed with a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 9.1A at 25C ambient temperature. Its on-resistance (Rds(on)) is specified at 7.3 mOhm typical at 10A and 10V.
The MOSFET has a gate-source threshold voltage (Vgs(th)) of 2.1V at 250A. The gate charge (Qg) is 19nC at 10V, and the input capacitance (Ciss) is 970pF at 15V. The power dissipation (Pd) is rated at 1.09W at 25C ambient temperature.
This device is housed in an 8-PowerTDFN package, also referred to as 8-DFN 5x6. It is designed for surface mount applications. The operating temperature range for this MOSFET is -55C to 150C (TJ).
The NTMFD4C820NAT1G is suitable for applications requiring efficient switching and power handling within its specified parameters. Its compact package and electrical characteristics make it a versatile component for electronic designs.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
9.1A nominal, 13.7A maximum at ambient temperature.
7.3 mOhm at 10A/10V and 3.4 mOhm at 20A/10V.
-55°C to 150°C junction temperature.
8-PowerTDFN or 8-DFN 5x6 surface mount package.
19nC at 10V.