| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,500 pcs
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10500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This N-channel MOSFET, part number NTMFD024N06CT1G from ON Semiconductor, is designed for power applications with a drain-to-source voltage of 60V. It offers a maximum continuous drain current of 8A at 25°C ambient temperature and 24A at 25°C case temperature.
The MOSFET has a low on-resistance of 22.6mOhm at 3A drain current and 10V gate-source voltage, with a gate charge of 5.7nC at 10V. Its input capacitance is rated at 333pF at 30V drain-source voltage. The gate threshold voltage is a maximum of 4V at 20µA.
Packaged in an 8-PowerTDFN configuration, this device is suitable for surface mounting. It operates within a temperature range of -55°C to 175°C. The NTMFD024N06CT1G is RoHS3 compliant, indicating adherence to environmental standards.
This component is part of the MOSFETs - Arrays category, specifically designed as a dual N-channel configuration. Its power dissipation is 3.1W at 25°C ambient and 28W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 60V.
The continuous current rating is 8A at 25°C ambient temperature and 24A at 25°C case temperature.
The maximum on-resistance is 22.6mOhm when the drain current is 3A and the gate-source voltage is 10V.
The operating temperature range is -55°C to 175°C.
It is in an 8-PowerTDFN package and is designed for Surface Mount.