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NTMFD016N06CT1G The ON Semiconductor NTMFD016N06CT1G is a dual N-channel MOSFET with a 60V drain-source voltage rating. It features a low on-resistance of 16.3mOhm at 5A and 10V.
Mfr Part #:

NTMFD016N06CT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTMFD016N06CT1G is a dual N-channel MOSFET with a 60V drain-source voltage rating. It features a low on-resistance of 16.3mOhm at 5A and 10V.
✓ Total Stock: 7,000 pcs
$ Price Range: $0.99

NTMFD016N06CT1G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
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Flip Electronics ✓
Non-Authorised Inventory information
6,000 pcs
On Request
6000 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
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NTMFD016N06CT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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NTMFD016N06CT1G Description

Short technical summary and product information.

This NTMFD016N06CT1G MOSFET from ON Semiconductor is a dual N-channel device designed for power applications. It offers a maximum drain-source voltage (Vdss) of 60V and a continuous current rating of 9A at ambient temperature, or 32A at case temperature.

 

The MOSFET exhibits a low on-resistance (Rds On) of 16.3mOhm at a drain current (Id) of 5A and gate-source voltage (Vgs) of 10V. The gate charge (Qg) is a maximum of 6.9nC at 10V Vgs, and the gate threshold voltage (Vgs(th)) is 4V maximum at 25µA.

 

Packaged in an 8-PowerTDFN (8-DFN (5x6) Dual Flag (SO8FL-Dual)) format, this component is designed for surface mounting. It operates within a temperature range of -55°C to 175°C (TJ). The input capacitance (Ciss) is 489pF maximum at 30V Vds.

NTMFD016N06CT1G Quick Information

Product Type: MOSFET
Canonical Name: NTMFD016N06CT1G
Subcategory: N-Channel

NTMFD016N06CT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTMFD016N06CT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMFD016N06CT1G Features

  • Maximum drain-source voltage of 60V
  • Maximum continuous drain current of 32A
  • Low Rds On of 16.3mOhm at 5A
  • Gate charge of 6.9nC at Vgs=10V
  • Operates from -55°C to 175°C

NTMFD016N06CT1G Applications

  • Ideal for power switching circuits
  • Suitable for motor control applications
  • Used in high-current power management
  • Designed for surface-mount assembly

NTMFD016N06CT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NTMFD016N06CT1G?

The maximum drain-source voltage (Vdss) is 60V.

What is the maximum on-resistance of this MOSFET?

The maximum on-resistance (Rds On) is 16.3mOhm at 5A and 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C (TJ).

What package type is the NTMFD016N06CT1G in?

It is in an 8-PowerTDFN package, specifically an 8-DFN (5x6) Dual Flag (SO8FL-Dual) for surface mounting.

Is the NTMFD016N06CT1G RoHS compliant?

Yes, it is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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