NTMD4820NR2G The ON Semiconductor NTMD4820NR2G is a dual N-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 6.4A. It is housed in an 8-SOIC package.
Mfr Part #:

NTMD4820NR2G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTMD4820NR2G is a dual N-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 6.4A. It is housed in an 8-SOIC package.
✓ Total Stock: 12,500 pcs
$ Price Range: $0.99

NTMD4820NR2G Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
10,000 pcs
10000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request

NTMD4820NR2G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

NTMD4820NR2G Description

Short technical summary and product information.

The ON Semiconductor NTMD4820NR2G is a dual N-Channel MOSFET designed for power applications. It features a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 6.4A at 25°C (Note 1). The MOSFET offers a low on-resistance (Rds(on)) of 20mOhm at 7.5A and 10V, minimizing conduction losses. Its optimized gate charge contributes to reduced switching losses.

 

This device operates within a temperature range of -55°C to 150°C. The NTMD4820NR2G is packaged in an 8-SOIC (Small Outline Integrated Circuit) package, saving board space. It is suitable for applications such as disk drives and DC-DC converters.

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 3V maximum and an input capacitance (Ciss) of 940pF maximum. The device also has a pulsed drain current (Idm) of 32A and a single pulse avalanche energy (EAS) of 60.5 mJ.

 

The NTMD4820NR2G is surface-mounted and designed for efficient power management in various electronic systems.

NTMD4820NR2G Quick Information

Product Type: MOSFET
Series: NTMD4820N
Canonical Name: NTMD4820NR2G Dual N-Channel MOSFET
Subcategory: N-Channel Power MOSFET

NTMD4820NR2G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTMD4820NR2G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMD4820NR2G Features

  • Dual N-Channel MOSFET design.
  • 30V drain-to-source voltage rating.
  • 6.4A continuous drain current capability.
  • Low on-resistance of 20mOhm.
  • Compact 8-SOIC surface mount package.

NTMD4820NR2G Applications

  • Suitable for DC-DC converter circuits.
  • Used in disk drive power management.
  • Ideal for motor control applications.
  • Applicable in printer power supplies.
  • Suitable for low-voltage switching applications.

NTMD4820NR2G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NTMD4820NR2G?

The drain-to-source voltage (Vdss) is 30V.

What is the continuous drain current for the NTMD4820NR2G?

The continuous drain current is 6.4A at 25°C (Note 1).

What is the on-resistance (Rds On) of the NTMD4820NR2G?

The Rds On is a maximum of 20mOhm at 7.5A and 10V.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is the NTMD4820NR2G supplied in?

It is supplied in an 8-SOIC (Small Outline Integrated Circuit) package.

Is the NTMD4820NR2G RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

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