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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
47,500 pcs
|
47500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Continuous Drain Current (Maximum @ TA=25 °C) | |
| Continuous Drain Current (Maximum @ Tc=25 °C) | |
| Current | |
| Drain To Source Breakdown Voltage (Maximum) | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Charge Qg (Maximum @ 10 V) | |
| Gate-to-Source Voltage | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Input Capacitance Ciss (Maximum @ 50 V) | |
| Junction to Ambient Thermal Resistance | |
| Junction to Case Thermal Resistance | |
| Lead Temperature Soldering Reflow | |
| Mounting Type | |
| Operating Junction and Storage Temperature Range | |
| Operating Temperature | |
| Package Description | |
| Pb-Free | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Rds On Max (Maximum @ 1.5 A, 10 V) | |
| Single Pulse Drain To Source Avalanche Energy (@ IL = 6 A, 8.2 A, L = 1 mH) | |
| Source Current (Body Diode) | |
| Supplier Device Package | |
| Technology |
The NTMC083NP10M5L from On Semiconductor is a power MOSFET designed for efficient power control. This device integrates both N-channel and P-channel MOSFETs within a single package, offering design flexibility.
Key electrical specifications include a drain-to-source breakdown voltage of 100V for the N-channel and -100V for the P-channel. The on-resistance (Rds(on)) is as low as 83mOhm at 1.5A and 10V for the N-channel and 131mOhm for the P-channel under similar conditions. Continuous drain current ratings are 4.1A (Tc) for the N-channel and -3.3A (Tc) for the P-channel at 25°C case temperature.
This MOSFET is housed in an 8-SOIC package, suitable for surface mounting. It operates across a wide temperature range of -55°C to 150°C (TJ). The device is designed to minimize conduction and driver losses, making it suitable for applications such as power tools, battery-operated vacuums, UAV/drones, material handling, motor drives, and home automation.
Environmental compliance includes Pb-Free, Halogen Free/BFR Free, and RoHS compliance. The part is not ESD protected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is 100V for the N-channel and -100V for the P-channel.
The Rds On is a maximum of 83mOhm at 1.5A, 10V for the N-channel and 131mOhm at 1.5A, 10V for the P-channel.
The operating junction and storage temperature range is -55°C to 150°C.
Yes, this device is RoHS3 Compliant.