NTLUS3A18PZTBG This P-Channel MOSFET from ON Semiconductor offers a -20V drain-to-source voltage and a continuous drain current of 5.1A. It features a low-profile UDFN package for board space saving.
Mfr Part #:

NTLUS3A18PZTBG

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
This P-Channel MOSFET from ON Semiconductor offers a -20V drain-to-source voltage and a continuous drain current of 5.1A. It features a low-profile UDFN package for board space saving.
✓ Total Stock: 46,000 pcs
$ Price Range: $0.99

NTLUS3A18PZTBG Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
45,000 pcs
45000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

NTLUS3A18PZTBG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTLUS3A18PZTBG Description

Short technical summary and product information.

The ON Semiconductor NTLUS3A18PZTBG is a P-Channel MOSFET designed for power management applications in portable products. It features a drain-to-source voltage of -20V and a continuous drain current of up to 5.1A at 25°C ambient temperature.

 

This MOSFET boasts an ultra-low Rds(on) of 18mOhm at 7A and 4.5V, contributing to efficient power delivery. The gate is protected by an ESD diode. It operates within a temperature range of -55°C to 150°C.

 

The device is housed in a compact 6-UDFN (2x2 mm) package with exposed drain pads, which enhance thermal conduction and save board space. This makes it suitable for applications like battery switches and high-side load switches in cell phones, media tablets, and other portable electronics.

NTLUS3A18PZTBG Quick Information

Product Type: MOSFET
Series: NTLUS3A18PZTBG
Canonical Name: On Semiconductor NTLUS3A18PZTBG P-Channel MOSFET

NTLUS3A18PZTBG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTLUS3A18PZTBG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTLUS3A18PZTBG Features

  • P-Channel MOSFET for power management.
  • Rated for -20V drain-to-source voltage.
  • Continuous drain current up to 5.1A.
  • Low Rds(on) of 18mOhm at 7A, 4.5V.
  • Compact 6-UDFN (2x2mm) package.

NTLUS3A18PZTBG Applications

  • Optimized for portable product power management.
  • Suitable for battery switch applications.
  • Ideal for high-side load switch functions.
  • Used in cell phones and media tablets.

NTLUS3A18PZTBG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NTLUS3A18PZTBG?

The drain-to-source voltage (Vdss) for the NTLUS3A18PZTBG is -20 V.

What is the maximum continuous drain current?

The maximum continuous drain current is 5.1A at 25°C ambient temperature (Note 2).

What is the Rds(on) for this MOSFET?

The Rds(on) is a maximum of 18mOhm at 7A drain current and 4.5V gate-to-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the NTLUS3A18PZTBG in?

It is supplied in a 6-UDFN (2x2mm) exposed pad package.

Is this MOSFET RoHS compliant?

Yes, this device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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