| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,403 pcs
|
3403 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Continuous Drain Current (Maximum @ TA = +85 °C) | |
| Continuous Drain Current (Maximum @ TA=25 °C) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drain-to-Source Breakdown Voltage Temperature Coefficient | |
| Drain-to-source breakdown voltage | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate to Source Voltage (Vgs) | |
| Gate-to-Source Leakage Current | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Junction To Ambient Thermal Resistance (Maximum @ Note 3) | |
| Junction To Ambient Thermal Resistance (Maximum @ min Pad (Note 4) | |
| Junction To Ambient Thermal Resistance (Maximum @ t = 5 s (Note 3) | |
| Lead Spacing | |
| Lead Temperature for Soldering Purposes | |
| Mounting Type | |
| Operating Junction and Storage Temperature | |
| Operating Temperature | |
| Pb-Free | |
| Power | |
| Power Dissipation (Maximum @ TA = 25 °C, Note 1) | |
| Power Dissipation (Maximum @ TA = 25 °C, Note 2) | |
| Pulsed Drain Current (tp = 10 µs) | |
| Rds On (Max) @ Id, Vgs | |
| Source Current Body Diode (Note 1) | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id | |
| Zero Gate Voltage Drain Current (Maximum @ VGS = 0 V, VDS = 24 V, TJ = 125 °C) | |
| Zero Gate Voltage Drain Current (Maximum @ VGS = 0 V, VDS = 24 V, TJ = 25 °C) |
This NTLUD4C26NTBG MOSFET from On Semiconductor is a dual N-channel device designed for power applications. It offers a maximum drain-to-source voltage of 30V and can handle a continuous drain current of up to 7.3A at 25°C ambient temperature, with a power dissipation of 1.70W under the same conditions.
The device utilizes MOSFET technology and comes in a compact 6-UDFN (2x2 mm) package with exposed drain pads for enhanced thermal conduction. Its low profile makes it suitable for space-constrained designs. Key electrical characteristics include a low Rds(on) of 21mOhm at 6A and 10V, and a gate threshold voltage of 1.1V at 250µA.
Applications for this MOSFET include power load switches, wireless charging systems, and DC-DC converters. It operates within a junction temperature range of -55°C to 150°C and is Pb-free and Halogen-free compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NTLUD4C26NTBG is 30V.
The continuous drain current (Id) for the NTLUD4C26NTBG is 7.3A at 25°C.
The NTLUD4C26NTBG comes in a 6-UDFN exposed pad package.
The operating junction and storage temperature range for the NTLUD4C26NTBG is -55°C to 150°C.
Yes, the NTLUD4C26NTBG is RoHS3 Compliant.