| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,756 pcs
|
2756 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Continuous Drain Current (Maximum @ TA = +85 °C) | |
| Continuous Drain Current (Maximum @ TA=25 °C) | |
| Continuous Drain Current (Maximum @ t ≤ 5 s, TA = 25 °C) | |
| Current | |
| Drain To Source Breakdown Voltage (VGS = 0 V, ID = 250 µA) | |
| Drain To Source Breakdown Voltage Temperature Coefficient (ID = 250 µA, ref to 25°C) | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate To Source Leakage Current (VDS = 0 V, VGS = ±12 V) | |
| Gate-to-Source Voltage | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Junction To Ambient Thermal Resistance (Maximum @ Steady State (Note 3) | |
| Junction To Ambient Thermal Resistance (Maximum @ Steady State Min Pad (Note 4) | |
| Junction To Ambient Thermal Resistance (Maximum @ t = 5 s (Note 3) | |
| Lead Temperature For Soldering (1/8″ from case for 10 s) | |
| Mounting Type | |
| Operating Junction And Storage Temperature (Minimum/Maximum) | |
| Operating Temperature | |
| Package / Case Code | |
| Pb-Free | |
| Power | |
| Power Dissipation (Maximum @ t < 5 s, TA = 25 °C) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Pulsed Drain Current (tp = 10 µs) | |
| Rds On (Max) @ Id, Vgs | |
| Source Current Body Diode (Note 1) | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id | |
| Zero Gate Voltage Drain Current (Maximum @ VGS = 0 V, VDS = 24 V, TJ = 125 °C) | |
| Zero Gate Voltage Drain Current (Maximum @ VGS = 0 V, VDS = 24 V, TJ = 25 °C) |
The NTLUD4C26NTAG from ON Semiconductor is a dual N-channel MOSFET housed in a compact 6-UDFN exposed pad package measuring 2.0 x 2.0 x 0.55 mm. This device is designed for applications requiring efficient power switching, such as power load switches, wireless charging, and DC-DC converters.
Key electrical characteristics include a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of up to 9.1A at 25°C ambient temperature. The MOSFET features a low on-resistance (Rds(on)) of 21mOhm at 6A and 10V Vgs, and a gate threshold voltage (Vgs(th)) of 1.1V at 250µA. Its input capacitance (Ciss) is 460pF at 15V Vds, and the gate charge (Qg) is a maximum of 9nC at 4.5V Vgs.
The UDFN package with exposed drain pads enhances thermal conduction, crucial for managing power dissipation, which is rated at 2.63W for short durations (t ≤ 5s) and 1.70W steady state at 25°C ambient on a 1 sq in FR4 pad. The operating temperature range is from -55°C to 150°C (TJ).
This MOSFET is Pb−Free, Halogen Free/BFR Free, and RoHS Compliant. The mounting type is surface mount, and it comes in a 6-UDFN (2x2) supplier package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 30V.
The continuous drain current is 7.3A at 25°C and 5.3A at 85°C.
The Rds(on) is a maximum of 21mOhm at 6A and 10V Vgs.
The operating temperature range is -55°C to 150°C.
It is supplied in a 6-UDFN exposed pad package.
Yes, the NTLUD4C26NTAG is RoHS3 Compliant.