| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,603 pcs
|
2603 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The NTLUD3A260PZTBG from ON Semiconductor is a dual P-Channel MOSFET suitable for power management in portable products. It features a -20V drain-to-source voltage and a continuous drain current of 1.3A. The device is housed in a compact 1.6x1.6mm UDFN package with exposed drain pads for enhanced thermal conduction.
Key electrical characteristics include a low Rds(on) of 200mOhm at 2A and 4.5V Vgs, and a gate charge of 4.2nC. The MOSFET operates over a wide temperature range of -55°C to 150°C.
This component is optimized for applications such as high-side load switches and PA switches. Its low profile and excellent thermal performance make it ideal for space-constrained designs in devices like cell phones, PMPs, DSCs, and GPS units.
The device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, meeting stringent environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is -20 V.
The continuous drain current is 1.3 A.
The Rds(on) is a maximum of 200 mOhm at 2 A and 4.5 V.
The operating junction and storage temperature range is -55°C to 150°C.
It is supplied in a 6-UDFN (1.6x1.6) package with an exposed pad.
Yes, the RoHS status is RoHS3 Compliant.