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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
172,155 pcs
|
172155 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Continuous Drain Current (Maximum @ TA=25 °C) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drain-to-source breakdown voltage | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Junction To Ambient Thermal Resistance (@ Steady State (Note 1) | |
| Junction To Ambient Thermal Resistance (@ Steady State (Note 2) | |
| Lead Spacing | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Junction and Storage Temperature Range | |
| Operating Temperature | |
| Pb-Free | |
| Power Dissipation (Max) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NTLJS5D0N03CTAG is a single N-Channel Power MOSFET designed for efficient power management applications. It offers a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 11.2A at 25°C ambient temperature. The device boasts a low on-resistance (Rds(on)) of 4.38mOhm when measured at 10A drain current and 10V gate-source voltage, minimizing conduction losses.
Key electrical characteristics include a gate-source voltage (Vgs) range of ±20V and a gate threshold voltage (Vgs(th)) of 2.2V at 250µA. Input capacitance (Ciss) is 1255pF at 15V, and gate charge (Qg) is 18nC at 10V, contributing to reduced driver losses. The MOSFET operates across a wide temperature range from -55°C to +150°C.
Packaged in a compact 6-PQFN (2x2) surface-mount configuration, the NTLJS5D0N03CTAG is suitable for designs where space is a constraint. Its thermal performance is characterized by a junction-to-ambient thermal resistance of 52°C/W on a 1 in² pad, and it has a maximum power dissipation of 860mW at 25°C.
This MOSFET is Pb-free and Halogen-free, aligning with environmental compliance standards. Applications include DC-DC converters, wireless chargers, power load switches, and battery management systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.56 | $0.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 30 V.
The continuous drain current (Id) is 11.2A at 25°C ambient temperature.
The maximum on-resistance (Rds On) is 4.38mOhm at 10A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to +150°C.
It is supplied in a 6-PQFN (2x2) package.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.