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NTLJS4D9N03HTAG The ON Semiconductor NTLJS4D9N03HTAG is an N-Channel MOSFET designed for power applications. It features a 30V drain-source voltage and a continuous drain current of 9.5A.
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NTLJS4D9N03HTAG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTLJS4D9N03HTAG is an N-Channel MOSFET designed for power applications. It features a 30V drain-source voltage and a continuous drain current of 9.5A.
✓ Total Stock: 15,850 pcs
$ Price Range: $0.99

NTLJS4D9N03HTAG Available from 1 distributor

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✓ Non-Authorised
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15,850 pcs
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NTLJS4D9N03HTAG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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NTLJS4D9N03HTAG Description

Short technical summary and product information.

This N-Channel MOSFET from ON Semiconductor, part number NTLJS4D9N03HTAG, is suitable for various power switching applications. It offers a maximum drain-source voltage of 30V and can handle a continuous drain current of 9.5A at ambient temperature. The MOSFET exhibits a low on-resistance of 6.1mOhm at 10A and 4.5V gate-source voltage, contributing to efficient power transfer.

 

Designed for surface mounting, the NTLJS4D9N03HTAG comes in a compact 6-PQFN (2x2) package. It operates within a temperature range of -55°C to 150°C (TJ). Key electrical characteristics include a gate charge of 6.8nC and an input capacitance of 1020pF. The gate threshold voltage is 2.1V at 250µA, and the maximum gate-source voltage is ±12V.

 

This component is RoHS3 compliant and has an MSL 1 rating. Its technology is based on MOSFET principles, making it a versatile choice for power management circuits.

NTLJS4D9N03HTAG Quick Information

Product Type: MOSFET
Canonical Name: On Semiconductor NTLJS4D9N03HTAG N-Channel MOSFET
Subcategory: N-Channel

NTLJS4D9N03HTAG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTLJS4D9N03HTAG Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTLJS4D9N03HTAG Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • Continuous drain current of 9.5A.
  • Low Rds On of 6.1mOhm at 10A, 4.5V.
  • Surface mountable in 6-PQFN package.
  • RoHS3 compliant for environmental considerations.

NTLJS4D9N03HTAG Applications

  • Ideal for power switching circuits.
  • Suitable for DC-DC converters.
  • Used in battery management systems.
  • Applicable in load switch designs.

NTLJS4D9N03HTAG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NTLJS4D9N03HTAG?

The maximum drain-source voltage is 30V.

What is the continuous drain current rating?

The continuous drain current is 9.5A at ambient temperature.

What is the Rds On (Max) at specified conditions?

The Rds On is a maximum of 6.1mOhm at 10A drain current and 4.5V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the NTLJS4D9N03HTAG supplied in?

It is supplied in a 6-PQFN (2x2) package for surface mounting.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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