NTLJS3113PT1G The NTLJS3113PT1G is a P-Channel MOSFET from ON Semiconductor with a -20V drain-to-source voltage and a continuous drain current of 3.5A.
Mfr Part #:

NTLJS3113PT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NTLJS3113PT1G is a P-Channel MOSFET from ON Semiconductor with a -20V drain-to-source voltage and a continuous drain current of 3.5A.
✓ Total Stock: 6,470 pcs
$ Price Range: $0.99

NTLJS3113PT1G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,470 pcs
6470 pcs On Request 1 On Request On Request 10+07+ On Request On Request

NTLJS3113PT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTLJS3113PT1G Description

Short technical summary and product information.

The NTLJS3113PT1G is a P-Channel MOSFET manufactured by ON Semiconductor. It features a drain-to-source voltage of -20V and a maximum continuous drain current of 3.5A at 25°C ambient temperature. The MOSFET has a low on-resistance of 40mOhm at 3A and 4.5V gate-source voltage, with a gate threshold voltage of 1V at 250µA.

 

This device is designed for low voltage logic level gate drive with a 1.5V RDS(on) rating. It comes in a compact 6-WDFN exposed pad package measuring 2x2 mm, offering excellent thermal conduction and a low profile (< 0.8 mm).

 

Applications include DC-DC converters (buck and boost circuits) and battery/load management in portable equipment like cell phones and media players. It is also suitable for high-side load switch applications. The operating temperature range is -55°C to 150°C.

NTLJS3113PT1G Quick Information

Product Type: MOSFET
Canonical Name: NTLJS3113PT1G P-Channel MOSFET

NTLJS3113PT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTLJS3113PT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTLJS3113PT1G Features

  • P-Channel MOSFET with -20V Vdss.
  • Low Rds(on) of 40mOhm at 3A, 4.5V.
  • Compact 2x2mm WDFN package.
  • Suitable for low voltage logic level gate drive.
  • Optimized for battery and load management.

NTLJS3113PT1G Applications

  • Used in DC-DC converters.
  • Ideal for load management applications.
  • Suitable for portable equipment.
  • Designed for high-side load switches.

NTLJS3113PT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NTLJS3113PT1G?

The drain-to-source voltage is -20 V.

What is the maximum continuous drain current?

The maximum continuous drain current is 3.5A at 25°C ambient temperature.

What is the Rds(on) of the NTLJS3113PT1G?

The Rds(on) is a maximum of 40mOhm at 3A and 4.5V gate-source voltage.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the NTLJS3113PT1G in?

It is supplied in a 6-WDFN Exposed Pad package, measuring 2x2 mm.

Is the NTLJS3113PT1G RoHS compliant?

Yes, the NTLJS3113PT1G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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