| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
32,700 pcs
|
32700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,958 pcs
|
1958 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTLJF4156NTAG from ON Semiconductor is an N-Channel Power MOSFET featuring an integrated Schottky Barrier Diode. This co-packaged design simplifies circuit layout for applications such as DC-DC converters and battery management systems in mobile devices.
Key electrical characteristics include a 30V drain-to-source voltage (VDSS) and a continuous drain current of 2.5A at 25°C (Note 2). The MOSFET exhibits a low on-resistance (RDS(on)) of 70mOhm at 2A and 4.5V gate-source voltage, with rated RDS(on) at low VGS(on) levels of 1.5V. The integrated Schottky diode has a maximum forward current of 2.0A and a typical forward voltage of 0.47V at 1.8V.
Designed for efficient thermal performance, the device is housed in a 6-WDFN package with an exposed drain pad. This low-profile package (< 0.8 mm) is suitable for thin environments. The operating temperature range is -55°C to 150°C (TJ). Mounting is via surface mount technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (VDSS) is 30V.
The continuous drain current is 2.5A at TJ = 25°C (Note 2).
The maximum on-resistance is 70mOhm at 2A drain current and 4.5V gate-source voltage.
The NTLJF4156NTAG is in a 6-WDFN Exposed Pad package.
The operating junction and storage temperature range is -55°C to 150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.