NTLJF3117PT1G The ON Semiconductor NTLJF3117PT1G is a P-Channel MOSFET with a 20V drain-source voltage and 2.3A continuous current. It is designed for surface mount applications.
Mfr Part #:

NTLJF3117PT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTLJF3117PT1G is a P-Channel MOSFET with a 20V drain-source voltage and 2.3A continuous current. It is designed for surface mount applications.
✓ Total Stock: 27,000 pcs
$ Price Range: $0.99

NTLJF3117PT1G Available from 1 distributor

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NTLJF3117PT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTLJF3117PT1G Description

Short technical summary and product information.

The ON Semiconductor NTLJF3117PT1G is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 2.3A at ambient temperature. The MOSFET offers a low on-resistance (Rds On) of 100mOhm at 2A and 4.5Vgs, with a gate threshold voltage (Vgs(th)) of 1V at 250µA.

 

This device operates within a temperature range of -55°C to 150°C (TJ) and has a power dissipation of 710mW (Ta). Key electrical characteristics include an input capacitance (Ciss) of 531pF at 10Vds and a gate charge (Qg) of 6.2nC at 4.5Vgs. It also incorporates a Schottky Diode feature.

 

The NTLJF3117PT1G is packaged in a 6-WDFN Exposed Pad (2x2) and is designed for surface mounting. Its technology is based on MOSFET (Metal Oxide) principles. The RoHS status is compliant, and it has an MSL rating of 1.

NTLJF3117PT1G Quick Information

Product Type: MOSFET
Canonical Name: NTLJF3117PT1G P-Channel MOSFET
Subcategory: P-Channel

NTLJF3117PT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTLJF3117PT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTLJF3117PT1G Features

  • P-Channel MOSFET with 20V Vds.
  • Continuous drain current of 2.3A.
  • Low Rds On of 100mOhm at 2A.
  • Surface mount 6-WDFN package.
  • Operating temperature -55°C to 150°C.

NTLJF3117PT1G Applications

  • Suitable for power switching applications.
  • Used in low-voltage motor control.
  • Ideal for battery management circuits.
  • Applicable in load switch designs.

NTLJF3117PT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the NTLJF3117PT1G?

The drain-source voltage (Vdss) for the NTLJF3117PT1G is 20V.

What is the continuous drain current of the NTLJF3117PT1G?

The continuous drain current (Id) for the NTLJF3117PT1G is 2.3A at ambient temperature.

What is the Rds On for the NTLJF3117PT1G?

The maximum Rds On for the NTLJF3117PT1G is 100mOhm at 2A and 4.5Vgs.

What is the operating temperature range for this MOSFET?

The operating temperature range for the NTLJF3117PT1G is -55°C to 150°C (TJ).

What package type is the NTLJF3117PT1G in?

The NTLJF3117PT1G is in a 6-WDFN Exposed Pad package, designed for surface mounting.

Is the NTLJF3117PT1G RoHS compliant?

Yes, the NTLJF3117PT1G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NTLJF3117PT1G?

The Moisture Sensitivity Level (MSL) for the NTLJF3117PT1G is 1 Unlimited.

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