NTLJD4116NT1G The ON Semiconductor NTLJD4116NT1G is a dual N-channel MOSFET designed for power applications. It features a 30V drain-source voltage and a continuous drain current of 2.5A.
Mfr Part #:

NTLJD4116NT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTLJD4116NT1G is a dual N-channel MOSFET designed for power applications. It features a 30V drain-source voltage and a continuous drain current of 2.5A.
✓ Total Stock: 4,577 pcs
$ Price Range: $0.99

NTLJD4116NT1G Available from 1 distributor

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✓ Non-Authorised
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4,577 pcs
4577 pcs On Request 1 On Request On Request 10+ On Request On Request

NTLJD4116NT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Number of Channels
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

NTLJD4116NT1G Description

Short technical summary and product information.

The ON Semiconductor NTLJD4116NT1G is a dual N-channel MOSFET with a drain-source voltage rating of 30V. It offers a continuous drain current of 2.5A and a maximum Rds On of 70mOhm at 2A and 4.5V gate-source voltage. This MOSFET is designed for operation at low voltage gate drive logic levels, making it suitable for battery and load management applications in portable equipment.

 

The device is housed in a compact 6-WDFN (2x2 mm) package with an exposed drain pad for excellent thermal conduction. Its low profile, less than 0.8 mm, allows for easy integration into thin environments. The operating temperature range is -55°C to 150°C.

 

Key electrical characteristics include a gate-source voltage of ±8V, input capacitance of 427pF at 15V, and gate charge of 6.5nC at 4.5V. The threshold voltage (Vgs(th)) is a maximum of 1V at 250µA. Applications include DC-DC converters, low-side load switches, and level shifting for high-side load switches.

 

This MOSFET is Pb-Free and RoHS3 compliant. It is supplied in a reel package with a standard quantity of 3000 units.

NTLJD4116NT1G Quick Information

Product Type: MOSFET
Series: NTLJD4116N
Canonical Name: N-Channel Dual MOSFET
Subcategory: N-Channel MOSFET

NTLJD4116NT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTLJD4116NT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTLJD4116NT1G Features

  • Dual N-channel MOSFET with 30V drain-source voltage.
  • Continuous drain current of 2.5A.
  • Low Rds On of 70mOhm at 2A, 4.5V.
  • Compact 2x2mm WDFN package.
  • Logic level gate drive compatible.

NTLJD4116NT1G Applications

  • Optimized for battery and load management.
  • Used in DC-DC converters (buck and boost).
  • Suitable for low-side load switch applications.
  • Enables level shifting for high-side switches.

NTLJD4116NT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating for the NTLJD4116NT1G?

The drain-to-source voltage (Vds) for the NTLJD4116NT1G is 30V.

What is the continuous drain current of the NTLJD4116NT1G?

The continuous drain current is 2.5A at TA = 25°C (Note 2).

What is the Rds On (Max) for the NTLJD4116NT1G?

The Rds On (Max) is 70mOhm at 2A, 4.5V.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

What package type is the NTLJD4116NT1G supplied in?

The NTLJD4116NT1G is supplied in a 6-WDFN (2x2 mm) package.

Is the NTLJD4116NT1G RoHS compliant?

Yes, the NTLJD4116NT1G is RoHS3 Compliant.

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