NTLJD3119CTAG The NTLJD3119CTAG is a complementary N-Channel and P-Channel MOSFET from ON Semiconductor. It features a 20V drain-source voltage and a 6-WDFN package.
Mfr Part #:

NTLJD3119CTAG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NTLJD3119CTAG is a complementary N-Channel and P-Channel MOSFET from ON Semiconductor. It features a 20V drain-source voltage and a 6-WDFN package.
✓ Total Stock: 2,206 pcs
$ Price Range: $0.99

NTLJD3119CTAG Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,206 pcs
2206 pcs On Request 1 On Request On Request 0951+ On Request On Request

NTLJD3119CTAG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

NTLJD3119CTAG Description

Short technical summary and product information.

The NTLJD3119CTAG is a complementary N-Channel and P-Channel MOSFET designed by ON Semiconductor. This device offers a drain-source voltage of 20V for the N-channel and -20V for the P-channel. It supports continuous drain currents up to 4.6A (N-Ch) and -4.1A (P-Ch) under pulsed conditions.

 

Key electrical characteristics include a low on-resistance of 65mOhm at 3.8A and 4.5V Vgs, and a gate threshold voltage of 1V maximum at 250µA. The MOSFET utilizes leading-edge trench technology for low on-resistance and features a logic-level gate.

 

Packaged in a compact 6-WDFN (2x2 mm) with an exposed drain pad for excellent thermal conduction, the NTLJD3119CTAG is suitable for applications requiring efficient power management. Its low profile makes it ideal for thin environments.

 

Applications include synchronous DC-DC conversion circuits, load/power management of portable devices like PDAs and cellular phones, and color display and camera flash regulators.

NTLJD3119CTAG Quick Information

Product Type: MOSFET
Canonical Name: NTLJD3119CTAG Complementary N-Channel and P-Channel MOSFET
Subcategory: Complementary

NTLJD3119CTAG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NTLJD3119CTAG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTLJD3119CTAG Features

  • Complementary N-Channel and P-Channel MOSFET.
  • 20V N-Channel and -20V P-Channel drain voltage.
  • Low on-resistance of 65mOhm at 3.8A, 4.5V.
  • Compact 6-WDFN (2x2mm) package.
  • Logic Level Gate technology for efficient switching.

NTLJD3119CTAG Applications

  • Used in low-voltage power switching circuits
  • Suitable for load switching in portable devices
  • Ideal for automotive and industrial applications
  • Designed for surface mount PCB assembly

NTLJD3119CTAG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the NTLJD3119CTAG?

The drain-source voltage is 20V for the N-Channel and -20V for the P-Channel.

What is the maximum continuous drain current?

The maximum continuous drain current is 3.8A for N-Channel and -3.3A for P-Channel at 25°C.

What is the Rds On for the NTLJD3119CTAG?

The Rds On is a maximum of 65mOhm at 3.8A and 4.5V Vgs.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the NTLJD3119CTAG in?

It is in a 6-WDFN Exposed Pad package, measuring 2x2mm.

Is the NTLJD3119CTAG RoHS compliant?

Yes, it is RoHS3 Compliant.

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