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NTK3139PT1G The ON Semiconductor NTK3139PT1G is a P-Channel MOSFET designed for load and power switching applications. It features a 20V drain-source voltage and a continuous drain current of 660mA.
Mfr Part #:

NTK3139PT1G

Available from 7 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTK3139PT1G is a P-Channel MOSFET designed for load and power switching applications. It features a 20V drain-source voltage and a continuous drain current of 660mA.
✓ Total Stock: 983,887 pcs
$ Price Range: $0.99

NTK3139PT1G Available from 7 distributors

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✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

NTK3139PT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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NTK3139PT1G Description

Short technical summary and product information.

The ON Semiconductor NTK3139PT1G is a P-Channel MOSFET designed for efficient load and power switching. It offers a drain-to-source voltage of 20V and a continuous drain current of 660mA at 25°C ambient temperature.

 

This MOSFET features low RDS(on) and operates at low logic level gate drive, making it suitable for battery management in ultra-small portable electronics. Its small footprint and thin profile, compared to SC-89 packages, are advantageous for space-constrained designs.

 

The device is housed in a SOT-723 surface mount package, requiring specific mounting considerations for optimal performance. It operates within a temperature range of -55°C to 150°C.

 

Key electrical characteristics include a gate-to-source voltage of ±6V and a gate threshold voltage of 1.2V at 250µA. The on-resistance is specified at 480mOhm maximum at 780mA and 4.5V.

NTK3139PT1G Quick Information

Product Type: MOSFET
Series: NTK3139P
Canonical Name: NTK3139PT1G P-Channel MOSFET
Subcategory: P-Channel MOSFET

NTK3139PT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTK3139PT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTK3139PT1G Features

  • P-Channel MOSFET for load switching.
  • 20V drain-source breakdown voltage.
  • 660mA continuous drain current.
  • Low RDS(on) for efficiency.
  • Compact SOT-723 surface mount package.

NTK3139PT1G Applications

  • Suitable for load/power switching.
  • Used for interfacing and logic switching.
  • Ideal for battery management.
  • Designed for ultra-small portable electronics.

NTK3139PT1G FAQs

4 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NTK3139PT1G?

The drain-to-source voltage (Vds) is 20V.

What is the continuous drain current for the NTK3139PT1G?

The continuous drain current is 660mA at 25°C ambient temperature.

What is the package type for the NTK3139PT1G MOSFET?

The device is supplied in a SOT-723 package.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C (TJ).

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