| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25,020 pcs
|
25020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,666 pcs
|
3666 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
2,774 pcs
|
2774 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTJS4151PT1G from On Semiconductor is a P-Channel Trench MOSFET designed for efficient power management. It offers a drain-to-source voltage (Vdss) of -20V and a continuous drain current (Id) of 3.3A at 25°C ambient temperature.
Key electrical characteristics include a maximum Rds(on) of 60mOhm at 3.3A and 4.5V Vgs, and a gate threshold voltage (Vgs(th)) of -1.2V maximum at 250µA. The device also features a gate charge (Qg) of 10nC maximum at 4.5V and an input capacitance (Ciss) of 850pF maximum at 10V.
With its leading trench technology, this MOSFET is designed to extend battery life in portable applications. It operates within a junction temperature range of -55°C to 150°C and has a power dissipation of 1W at 25°C ambient. The SC-88 (SOT-363) package provides maximum circuit board utilization.
Applications include high-side load switching in cell phones, computing devices, digital cameras, MP3 players, and PDAs. The MOSFET includes gate diodes for ESD protection.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is -20 V.
The maximum continuous drain current is 3.3 A at 25°C ambient temperature.
The Rds(on) is a maximum of 60 mOhm at 3.3A drain current and 4.5V gate-source voltage.
The operating junction and storage temperature range is -55°C to 150°C.
The NTJS4151PT1G is supplied in an SC-88/SC70-6/SOT-363 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.