NTJS3157NT1G The ON Semiconductor NTJS3157NT1G is an N-Channel Trench MOSFET designed for efficient power management. It offers a 20V drain-to-source voltage and a continuous drain current of 3.2A.
Mfr Part #:

NTJS3157NT1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTJS3157NT1G is an N-Channel Trench MOSFET designed for efficient power management. It offers a 20V drain-to-source voltage and a continuous drain current of 3.2A.
✓ Total Stock: 88,271 pcs
$ Price Range: $0.99

NTJS3157NT1G Available from 3 distributors

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61,020 pcs
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21,000 pcs
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6,251 pcs
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NTJS3157NT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTJS3157NT1G Description

Short technical summary and product information.

The NTJS3157NT1G from ON Semiconductor is a single N-Channel Trench MOSFET. It is designed with leading trench technology for low RDS(ON), contributing to extended battery life and increased circuit efficiency through fast switching.

 

Key electrical specifications include a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 3.2A at 25°C ambient temperature. The on-resistance (Rds On) is a maximum of 60mOhm at 4A and 4.5V gate-to-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 1V at 250µA, and the gate-to-source voltage (Vgs) is rated up to ±8V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It features a maximum power dissipation of 1W at 25°C ambient temperature. The input capacitance (Ciss) is 500pF at 10V, and the gate charge (Qg) is 15nC at 4.5V.

 

The NTJS3157NT1G is housed in an SC-88/SC70-6/SOT-363 package, suitable for surface mounting. This compact package provides maximum circuit board utilization. The device is Pb-Free, aligning with environmental standards.

NTJS3157NT1G Quick Information

Product Type: MOSFET
Series: NTJS3157NT1G
Canonical Name: NTJS3157NT1G N-Channel Trench MOSFET
Subcategory: N-Channel

NTJS3157NT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NTJS3157NT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTJS3157NT1G Features

  • N-Channel Trench MOSFET technology.
  • 20V Drain-to-Source Voltage (Vdss).
  • 3.2A Continuous Drain Current (Id).
  • Low Rds(on) of 60mOhm maximum.
  • Compact SC-88/SC70-6/SOT-363 package.

NTJS3157NT1G Applications

  • Suitable for DC-DC conversion.
  • Ideal for low-side load switches.
  • Used in portable electronic devices.
  • Applications in computing and digital cameras.

NTJS3157NT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTJS3157NT1G?

The maximum drain-to-source voltage (Vdss) is 20V.

What is the continuous drain current rating?

The continuous drain current is 3.2A at 25°C ambient temperature.

What is the maximum on-resistance (Rds On)?

The maximum Rds On is 60mOhm when tested at 4A drain current and 4.5V gate-to-source voltage.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the NTJS3157NT1G supplied in?

It is supplied in an SC-88/SC70-6/SOT-363 package suitable for surface mounting.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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