NTJD4401NT4G The On Semiconductor NTJD4401NT4G is a dual N-channel MOSFET designed for load power switching. It features 20V drain-to-source voltage and 630mA continuous drain current.
Mfr Part #:

NTJD4401NT4G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTJD4401NT4G is a dual N-channel MOSFET designed for load power switching. It features 20V drain-to-source voltage and 630mA continuous drain current.
✓ Total Stock: 845,000 pcs
$ Price Range: $0.99

NTJD4401NT4G Available from 1 distributor

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✓ Non-Authorised
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NTJD4401NT4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

NTJD4401NT4G Description

Short technical summary and product information.

The NTJD4401NT4G from On Semiconductor is a dual N-channel MOSFET suitable for applications like load power switching and DC-DC conversion in battery-powered devices. It offers a drain-to-source voltage of 20V and a continuous drain current of up to 630mA, depending on the thermal conditions.

 

This MOSFET features ESD protected gates and a logic-level gate design, making it easier to interface with microcontrollers. The device is housed in a compact SC-88/SC70-6/SOT-363 surface-mount package, measuring 2 x 2 mm, which is beneficial for space-constrained designs.

 

Key electrical characteristics include a maximum gate threshold voltage of 1.5V and an on-resistance as low as 0.29 Ohms at 4.5V gate-source voltage. The operating temperature range is -55°C to 150°C.

 

This AEC-Q101 qualified component is Pb-free and RoHS compliant, making it suitable for automotive and general electronic applications requiring reliable performance and environmental considerations.

NTJD4401NT4G Quick Information

Product Type: MOSFET
Canonical Name: NTJD4401NT4G Dual N-Channel MOSFET
Subcategory: Dual N-Channel

NTJD4401NT4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NTJD4401NT4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTJD4401NT4G Features

  • Dual N-Channel MOSFET configuration.
  • 20V drain-to-source voltage rating.
  • 630mA continuous drain current.
  • ESD protected gate feature.
  • Compact SC-88 surface-mount package.

NTJD4401NT4G Applications

  • Ideal for load power switching.
  • Suitable for Li-Ion battery devices.
  • Used in cell phones and media players.
  • Applicable for DC-DC conversion.

NTJD4401NT4G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NTJD4401NT4G?

The drain-to-source voltage (Vdss) is 20V.

What is the continuous drain current of the NTJD4401NT4G?

The continuous drain current is 630mA at 25°C ambient temperature (based on R/C0113JA).

What is the package type for the NTJD4401NT4G?

The package is SC-88/SC70-6/SOT-363, a surface-mount type.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

Is the NTJD4401NT4G RoHS compliant?

Yes, the device is Pb-Free and RoHS Compliant.

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