| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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845,000 pcs
|
845000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
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| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The NTJD4401NT4G from On Semiconductor is a dual N-channel MOSFET suitable for applications like load power switching and DC-DC conversion in battery-powered devices. It offers a drain-to-source voltage of 20V and a continuous drain current of up to 630mA, depending on the thermal conditions.
This MOSFET features ESD protected gates and a logic-level gate design, making it easier to interface with microcontrollers. The device is housed in a compact SC-88/SC70-6/SOT-363 surface-mount package, measuring 2 x 2 mm, which is beneficial for space-constrained designs.
Key electrical characteristics include a maximum gate threshold voltage of 1.5V and an on-resistance as low as 0.29 Ohms at 4.5V gate-source voltage. The operating temperature range is -55°C to 150°C.
This AEC-Q101 qualified component is Pb-free and RoHS compliant, making it suitable for automotive and general electronic applications requiring reliable performance and environmental considerations.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 20V.
The continuous drain current is 630mA at 25°C ambient temperature (based on R/C0113JA).
The package is SC-88/SC70-6/SOT-363, a surface-mount type.
The operating junction and storage temperature range is -55°C to 150°C.
Yes, the device is Pb-Free and RoHS Compliant.