NTJD4401NT4 The ON Semiconductor NTJD4401NT4 is a dual N-channel MOSFET with a 20V drain-to-source voltage and 630mA continuous drain current. It is housed in a compact SC-88 package.
Mfr Part #:

NTJD4401NT4

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTJD4401NT4 is a dual N-channel MOSFET with a 20V drain-to-source voltage and 630mA continuous drain current. It is housed in a compact SC-88 package.
✓ Total Stock: 845,000 pcs
$ Price Range: $0.99

NTJD4401NT4 Available from 1 distributor

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NTJD4401NT4 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
ESD Protection
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id

NTJD4401NT4 Description

Short technical summary and product information.

The ON Semiconductor NTJD4401NT4 is a dual N-channel MOSFET designed for small signal applications. It features a drain-to-source voltage (Vdss) of 20V and a continuous drain current (ID) of up to 630mA, depending on the thermal resistance conditions. The device offers a low on-resistance, with Rds(on) as low as 0.29 Ohms at 4.5V gate-source voltage and 630mA drain current.

 

This MOSFET is suitable for load power switching and is found in applications such as Li-Ion battery supplied devices, cell phones, media players, digital cameras, and PDAs. It operates over a wide temperature range from -55°C to 150°C.

 

The NTJD4401NT4 comes in a small footprint SC-88 (SOT-363) package, making it ideal for space-constrained designs. It also features ESD protection on the gate and is AEC-Q101 qualified, indicating its suitability for automotive applications. The device is Pb-free and RoHS compliant.

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 1.5V maximum at 250µA, input capacitance (Ciss) of 46pF at 20V, and gate charge (Qg) of 3nC at 4.5V. Thermal resistance from junction-to-ambient is rated at 400°C/W typical.

NTJD4401NT4 Quick Information

Product Type: MOSFET
Canonical Name: NTJD4401NT4 Dual N-Channel MOSFET
Subcategory: Dual N-Channel

NTJD4401NT4 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NTJD4401NT4 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTJD4401NT4 Features

  • Dual N-Channel MOSFET configuration.
  • 20V Drain-to-Source Voltage (Vdss).
  • 630mA Continuous Drain Current (ID).
  • Low Rds(on) down to 0.29 Ohms.
  • Compact SC-88 (SOT-363) package.

NTJD4401NT4 Applications

  • Load power switching applications.
  • Ideal for Li-Ion battery devices.
  • Used in cell phones and media players.
  • Suitable for digital cameras and PDAs.
  • DC-DC conversion circuits.

NTJD4401NT4 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTJD4401NT4?

The maximum drain-to-source voltage (Vdss) for the NTJD4401NT4 is 20V.

What is the continuous drain current of the NTJD4401NT4?

The continuous drain current (ID) is 630mA at TA = 25°C based on R/C0113JA.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the NTJD4401NT4 supplied in?

The NTJD4401NT4 is supplied in the SC-88/SC70-6/SOT-363 package.

Is the NTJD4401NT4 RoHS compliant?

Yes, the NTJD4401NT4 is RoHS3 compliant.

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