| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
845,000 pcs
|
845000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NTJD4401NT2G is a dual N-channel MOSFET with a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current of 630mA. It offers a low Rds On of 375mOhm at 4.5V Vgs and features ESD protected gates.
This MOSFET is suitable for applications such as load power switching and devices supplied by Li-Ion batteries. Its small footprint, with a package size of SC-88/SC70-6/SOT-363, makes it ideal for space-constrained designs. The device operates within a wide temperature range of -55°C to 150°C.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of up to 1.5V and an input capacitance (Ciss) of 46pF. The device is Pb-Free and RoHS compliant, meeting environmental standards for modern electronic manufacturing.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-to-Source Voltage (Vdss) for the NTJD4401NT2G is 20V.
The continuous drain current rating is 630mA at 25°C based on R/C0113JA.
The typical Rds On is 0.29 Ohm at 4.5V Vgs and 630mA Id.
The operating junction and storage temperature range is -55°C to 150°C.
The NTJD4401NT2G is supplied in the SC-88/SC70-6/SOT-363 package.
Yes, the NTJD4401NT2G is RoHS3 Compliant.