| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
845,000 pcs
|
845000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NTJD4401NT1 is a dual N-channel MOSFET suitable for various applications including load power switching and DC-DC conversion. It features a small footprint in an SC-88 package, measuring 2 x 2 mm.
Key electrical characteristics include a drain-to-source voltage (Vdss) of 20V and a continuous drain current (ID) of 630mA at 25°C (based on R/C0113JA). The on-resistance (Rds On) is a maximum of 375mOhm at 630mA and 4.5V gate-source voltage, with a typical value of 290mOhm at 4.5V. The gate threshold voltage (Vgs(th)) is a maximum of 1.5V at 250µA, and it operates as a logic-level gate.
This device is ESD protected and AEC-Q101 qualified, making it suitable for demanding applications. The operating junction and storage temperature range is from -55°C to 150°C. It is supplied in a 6-lead SC-88/SC70-6/SOT-363 surface mount package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) of the NTJD4401NT1 is 20V.
The maximum continuous drain current (ID) is 630mA at 25°C (based on R/C0113JA).
The NTJD4401NT1 is supplied in an SC-88/SC70-6/SOT-363 package.
The operating junction and storage temperature range is -55°C to 150°C.
Yes, the NTJD4401NT1 is RoHS3 compliant.