NTJD4152PT2G The ON Semiconductor NTJD4152PT2G is a dual P-channel MOSFET designed for load management and switching applications. It offers 20V drain-source voltage and 880mA continuous drain current.
Mfr Part #:

NTJD4152PT2G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTJD4152PT2G is a dual P-channel MOSFET designed for load management and switching applications. It offers 20V drain-source voltage and 880mA continuous drain current.
✓ Total Stock: 37,020 pcs
$ Price Range: $0.99

NTJD4152PT2G Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
30,000 pcs
30000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
7,020 pcs
7020 pcs On Request 1 On Request On Request On Request On Request On Request

NTJD4152PT2G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

NTJD4152PT2G Description

Short technical summary and product information.

The ON Semiconductor NTJD4152PT2G is a dual P-channel MOSFET featuring trench technology for low RDS(ON) performance. It is designed for applications such as load/power management, charging circuits, and load switching, commonly found in cell phones, computing devices, digital cameras, MP3 players, and PDAs.

 

This MOSFET has a drain-to-source breakdown voltage of 20V and a continuous drain current of up to 880mA at 25°C. The Rds(on) is rated at a maximum of 260mOhm at 880mA and 4.5V gate-source voltage. It also features ESD protected gates.

 

The device is housed in a compact SC-88/SC70-6/SOT-363 package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C.

 

Key electrical characteristics include a gate charge of 2.2nC at 4.5V and a gate-source threshold voltage of 1.2V at 250µA. The datasheet specifies various thermal resistance ratings, including Junction-to-Ambient at 460°C/W steady state.

NTJD4152PT2G Quick Information

Product Type: MOSFET
Canonical Name: Dual P-Channel Trench Small Signal ESD Protected MOSFET
Subcategory: P-Channel

NTJD4152PT2G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTJD4152PT2G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTJD4152PT2G Features

  • Dual P-Channel MOSFET configuration.
  • 20V drain-source breakdown voltage.
  • 880mA continuous drain current.
  • Low Rds(on) of 260mOhm at 880mA, 4.5V.
  • ESD protected gate for enhanced reliability.

NTJD4152PT2G Applications

  • Ideal for load and power management.
  • Suitable for charging circuits.
  • Used in load switching applications.
  • Common in mobile and portable devices.

NTJD4152PT2G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source breakdown voltage for the NTJD4152PT2G?

The drain-to-source breakdown voltage is 20V.

What is the continuous drain current of the NTJD4152PT2G?

The continuous drain current is 880mA at 25°C.

What is the Rds(on) for the NTJD4152PT2G?

The Rds(on) is a maximum of 260mOhm at 880mA and 4.5V.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

What package type is the NTJD4152PT2G available in?

It is available in a 6-TSSOP, SC-88, SOT-363 package.

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