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NTJD4152PT1G The On Semiconductor NTJD4152PT1G is a dual P-channel MOSFET designed for load and power management applications. It features trench technology for low RDS(ON) and ESD protected gates.
Mfr Part #:

NTJD4152PT1G

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTJD4152PT1G is a dual P-channel MOSFET designed for load and power management applications. It features trench technology for low RDS(ON) and ESD protected gates.
✓ Total Stock: 190,137 pcs
$ Price Range: $0.99

NTJD4152PT1G Available from 6 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

NTJD4152PT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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NTJD4152PT1G Description

Short technical summary and product information.

The NTJD4152PT1G from On Semiconductor is a dual P-channel MOSFET utilizing trench technology for enhanced RDS(ON) performance. This device operates at a Drain-to-Source Voltage (VDSS) of 20V and can handle a Continuous Drain Current (ID) of up to 0.88A at 25°C.

 

Key electrical characteristics include a maximum Rds On of 260mOhm at 880mA and 4.5V, and a Gate Charge (Qg) of 2.2nC at 4.5V. The MOSFET features an ESD protected gate and is suitable for logic-level gate applications.

 

Packaged in a compact SC-88/SC70-6/SOT-363 surface-mount package, the NTJD4152PT1G is designed for applications such as load/power management, charging circuits, and load switching in portable electronics like cell phones, digital cameras, and PDAs. It operates within a wide temperature range of -55°C to 150°C (TJ).

NTJD4152PT1G Quick Information

Product Type: MOSFET
Canonical Name: Dual P-Channel Trench Small Signal ESD Protected MOSFET
Subcategory: P-Channel

NTJD4152PT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free Devices

NTJD4152PT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTJD4152PT1G Features

  • Dual P-Channel MOSFET configuration.
  • 20V Drain-to-Source Voltage (VDSS).
  • 0.88A Continuous Drain Current (ID).
  • Low RDS(ON) with trench technology.
  • ESD protected gate for enhanced reliability.

NTJD4152PT1G Applications

  • Load and power management circuits.
  • Charging circuit applications.
  • Load switching functions.
  • Portable electronic devices.
  • Cell phones and digital cameras.

NTJD4152PT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-to-Source Voltage (VDSS) for the NTJD4152PT1G?

The maximum Drain-to-Source Voltage (VDSS) for the NTJD4152PT1G is 20V.

What is the continuous drain current rating of the NTJD4152PT1G?

The continuous drain current rating is 0.88A at 25°C and 0.63A at 85°C.

What is the package type for the NTJD4152PT1G MOSFET?

The NTJD4152PT1G is supplied in an SC-88/SC70-6/SOT-363 package.

What is the operating temperature range for the NTJD4152PT1G?

The operating temperature range is -55°C to 150°C (TJ).

Is the NTJD4152PT1G RoHS compliant?

Yes, the NTJD4152PT1G is RoHS3 Compliant.

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