| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
129,000 pcs
|
129000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The NTJD4152PT1 from ON Semiconductor is a dual P-channel MOSFET utilizing trench technology for low RDS(ON) performance. It is rated for a maximum drain-to-source voltage of 20V and a continuous drain current of up to 0.88A at 25°C.
This MOSFET is suitable for applications such as load/power management, charging circuits, and load switching. It is housed in a compact SC-88/SC70-6/SOT-363 package, making it ideal for space-constrained designs. The device features ESD protected gates and is Pb-Free.
Key electrical characteristics include a typical RDS(ON) of 215mOhm at 4.5V gate-source voltage and 880mA drain current. The operating temperature range is -55°C to 150°C.
Mounting is surface mount. The device is designed for applications in cell phones, computing, digital cameras, MP3s, and PDAs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) of the NTJD4152PT1 is 20V.
The NTJD4152PT1 is available in a SC-88/SC70-6/SOT-363 package.
The operating temperature range for the NTJD4152PT1 is -55°C to 150°C.
The NTJD4152PT1 is RoHS3 Compliant.