NTJD4105CT1G The ON Semiconductor NTJD4105CT1G is a complementary N-channel and P-channel MOSFET in an SC-88 package. It features a 20V/8V drain-source voltage and 630mA/775mA continuous drain current.
Mfr Part #:

NTJD4105CT1G

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTJD4105CT1G is a complementary N-channel and P-channel MOSFET in an SC-88 package. It features a 20V/8V drain-source voltage and 630mA/775mA continuous drain current.
✓ Total Stock: 79,728 pcs
$ Price Range: $0.99

NTJD4105CT1G Available from 6 distributors

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✓ Non-Authorised

NTJD4105CT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id

NTJD4105CT1G Description

Short technical summary and product information.

The NTJD4105CT1G from ON Semiconductor is a complementary MOSFET featuring both N-channel and P-channel devices within a single SC-88 package. This configuration is suitable for applications requiring space-saving solutions.

 

Key electrical characteristics include a drain-to-source voltage of 20V for the N-channel and -8.0V for the P-channel. The continuous drain current is rated at 630mA for the N-channel and -775mA for the P-channel at 25°C. The on-resistance (RDS(on)) is specified as 375mOhm at 630mA and 4.5V gate-source voltage.

 

This MOSFET is designed for applications such as DC-DC conversion, load/power switching, and is suitable for use in single or dual cell Li-Ion battery-supplied devices like cell phones, MP3 players, digital cameras, and PDAs. The device operates over a temperature range of -55°C to 150°C.

 

The component is housed in an SC-88/SC70-6/SOT-363 package, designed for surface mounting. It offers ESD protection on the gate and is available in Pb-Free packages.

NTJD4105CT1G Quick Information

Product Type: MOSFET
Canonical Name: NTJD4105CT1G Complementary N and P Channel MOSFET
Subcategory: Complementary

NTJD4105CT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTJD4105CT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTJD4105CT1G Features

  • Complementary N and P channel device.
  • 20V N-channel, -8.0V P-channel drain voltage.
  • 630mA N-channel, -775mA P-channel drain current.
  • Low RDS(on) of 375mOhm at 630mA/4.5V.
  • SC-88 package for small footprint.

NTJD4105CT1G Applications

  • Used in DC-DC conversion circuits.
  • Suitable for load and power switching.
  • Ideal for battery-supplied devices.
  • Applications include cell phones and cameras.

NTJD4105CT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NTJD4105CT1G MOSFET?

The drain-to-source voltage is 20V for the N-channel and -8.0V for the P-channel.

What is the continuous drain current for the NTJD4105CT1G?

The continuous drain current is 630mA for the N-channel and -775mA for the P-channel at 25°C.

What is the on-resistance (RDS(on)) of the NTJD4105CT1G?

The on-resistance is a maximum of 375mOhm at 630mA and 4.5V gate-source voltage.

What is the operating temperature range for the NTJD4105CT1G?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the NTJD4105CT1G MOSFET supplied in?

The NTJD4105CT1G is supplied in an SC-88/SC70-6/SOT-363 package.

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