NTJD4001NT1 The On Semiconductor NTJD4001NT1 is a dual N-channel MOSFET in a compact SOT-363 package. It offers 30V drain-to-source voltage and 250mA continuous drain current.
Mfr Part #:

NTJD4001NT1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTJD4001NT1 is a dual N-channel MOSFET in a compact SOT-363 package. It offers 30V drain-to-source voltage and 250mA continuous drain current.
Total Stock: 2,874,000 pcs
$ Price Range: $0.99

NTJD4001NT1 Available from 1 distributor

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NTJD4001NT1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

NTJD4001NT1 Description

Short technical summary and product information.

The NTJD4001NT1 from On Semiconductor is a dual N-channel MOSFET designed for small signal applications. It features a 30V drain-to-source breakdown voltage and can handle a continuous drain current of 250mA at 25°C, with a power dissipation of 272mW. The MOSFET has a low on-resistance, with Rds(on) typically 1.0 Ohm at 4V gate-to-source voltage and 10mA drain current.

 

This device is housed in a compact SC-88/SOT-363 surface-mount package, offering a smaller footprint compared to TSOP-6. It operates over a wide temperature range of -55°C to 150°C. The NTJD4001NT1 is suitable for applications such as low-side load switching, Li-Ion battery supplied devices, buck converters, and level shifts.

 

Key electrical characteristics include a gate threshold voltage typically between 0.8V and 1.5V, and low gate charge for fast switching. The device also features an ESD protected gate.

NTJD4001NT1 Quick Information

Product Type: MOSFET
Canonical Name: Dual N-Channel Small Signal MOSFET
Subcategory: Array

NTJD4001NT1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTJD4001NT1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTJD4001NT1 Features

  • Dual N-channel MOSFET configuration.
  • 30V drain-to-source voltage rating.
  • 250mA continuous drain current.
  • Compact SOT-363 surface mount package.
  • Wide operating temperature range.

NTJD4001NT1 Applications

  • Low-side load switching applications.
  • Ideal for battery-powered devices.
  • Suitable for buck converter circuits.
  • Used in level shifting designs.

NTJD4001NT1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NTJD4001NT1?

The drain-to-source voltage (Vdss) for the NTJD4001NT1 is 30V.

What is the continuous drain current of the NTJD4001NT1?

The continuous drain current (Id) for the NTJD4001NT1 is 250mA at 25°C.

What is the Rds On for the NTJD4001NT1?

The Rds On is a maximum of 1.5 Ohm at 10mA drain current and 4V gate-to-source voltage, and also a maximum of 2.5 Ohm at 10mA drain current and 2.5V gate-to-source voltage.

What is the operating temperature range for the NTJD4001NT1?

The operating junction and storage temperature range for the NTJD4001NT1 is -55°C to 150°C.

What package type is the NTJD4001NT1 available in?

The NTJD4001NT1 is available in the SC-88/SC70-6/SOT-363 package.

Is the NTJD4001NT1 RoHS compliant?

The NTJD4001NT1 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NTJD4001NT1?

The Moisture Sensitivity Level (MSL) for the NTJD4001NT1 is 1 Unlimited.

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