| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,100 pcs
|
5100 pcs | On Request | 1 | On Request | On Request | 2015 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The NTJD2152PT1G from ON Semiconductor is a dual P-channel Trench MOSFET designed for small signal applications. It features a low RDS(ON) performance and ESD protected gate.
This MOSFET has a drain-to-source voltage (Vdss) of 8V and a continuous drain current of up to 775mA. The gate threshold voltage (Vgs(th)) is typically -0.83V at -250µA, and the on-resistance (RDS(on)) is a maximum of 300mOhm at 570mA and 4.5V gate-source voltage.
Packaged in an SC-88/SC70-6/SOT-363 surface-mount package, the NTJD2152PT1G is suitable for space-constrained designs. Its operating temperature range is -55°C to 150°C (TJ).
Applications include load power switching, DC-DC conversion, and Li-Ion battery charging circuits. It is also used in portable electronics like cell phones, media players, digital cameras, and PDAs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NTJD2152PT1G is 8V.
The maximum continuous drain current is 775mA at 25°C ambient temperature.
The typical on-resistance is 300mOhm when measured at 570mA drain current and 4.5V gate-to-source voltage.
The operating junction and storage temperature range is -55°C to 150°C.
The NTJD2152PT1G is supplied in an SC-88/SC70-6/SOT-363 package.