| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Height | |
| Lead Style | |
| Length | |
| Mounting Type | |
| Number of Channels | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NTHS5443T1G is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage of 20V and a continuous drain current of 3.6A at ambient temperature. The device offers a low on-resistance of 65mOhm at 3.6A and 4.5V gate-source voltage.
This MOSFET operates within a temperature range of -55°C to 150°C. It is constructed using Metal Oxide Semiconductor technology and comes in a ChipFET™ package suitable for surface mounting. The device has a gate charge of 12 nC at 4.5V and a gate threshold voltage of 600mV at 250µA.
Key electrical characteristics include a gate-source voltage range of ±12V and a power dissipation of 1.3W. The NTHS5443T1G is packaged on a reel for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 20 V.
The continuous drain current is 3.6 A.
The maximum Rds On is 65mOhm at 3.6A and 4.5V Vgs.
The operating temperature range is -55°C to 150°C.
The NTHS5443T1G is supplied in a ChipFET™ package suitable for surface mounting.