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NTHS5443T1 The On Semiconductor NTHS5443T1 is a P-Channel MOSFET designed for surface mount applications. It offers a 20V drain-to-source voltage and a continuous drain current of 3.6A.
Mfr Part #:

NTHS5443T1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTHS5443T1 is a P-Channel MOSFET designed for surface mount applications. It offers a 20V drain-to-source voltage and a continuous drain current of 3.6A.
✓ Total Stock: 2,825 pcs
$ Price Range: $0.99

NTHS5443T1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
2,825 pcs
On Request
2825 pcs On Request 1 On Request On Request On Request On Request On Request
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NTHS5443T1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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NTHS5443T1 Description

Short technical summary and product information.

The NTHS5443T1 from On Semiconductor is a P-Channel MOSFET featuring a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 3.6A at 25°C.

 

This MOSFET has a low on-resistance (Rds On) of 65mOhm at 3.6A and 4.5V Vgs, with a drive voltage range of 2.5V to 4.5V. The gate charge (Qg) is 12nC at 4.5V, and the gate threshold voltage (Vgs(th)) is 600mV at 250µA.

 

Operating within a temperature range of -55°C to 150°C, the NTHS5443T1 has a maximum power dissipation of 1.3W. It is housed in a ChipFET™ package suitable for surface mounting.

 

Compliance includes RoHS3, REACH Unaffected, and Moisture Sensitivity Level 1 (Unlimited).

NTHS5443T1 Quick Information

Product Type: MOSFET
Canonical Name: NTHS5443T1 P-Channel MOSFET
Subcategory: P-Channel

NTHS5443T1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTHS5443T1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTHS5443T1 Features

  • P-Channel MOSFET with 20V drain-to-source voltage.
  • Continuous drain current of 3.6A at 25°C.
  • Low Rds On of 65mOhm at 3.6A, 4.5V.
  • Surface mount ChipFET™ package.
  • Wide operating temperature range of -55°C to 150°C.

NTHS5443T1 Applications

  • Suitable for power switching applications.
  • Ideal for battery-powered devices.
  • Used in low-voltage motor control.
  • Applicable in power management circuits.

NTHS5443T1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NTHS5443T1?

The drain-to-source voltage (Vdss) for the NTHS5443T1 is 20V.

What is the continuous drain current of the NTHS5443T1?

The continuous drain current (Id) is 3.6A at 25°C.

What is the Rds On resistance for the NTHS5443T1?

The Rds On is a maximum of 65mOhm at 200mA drain current and 4.5V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the NTHS5443T1 available in?

The NTHS5443T1 is available in an 8-SMD, Flat Lead ChipFET™ package for surface mounting.

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