NTHS5441T1G The On Semiconductor NTHS5441T1G is a P-Channel MOSFET with a 20V drain-source voltage and 3.9A continuous drain current. It features a low Rds(on) of 46mOhm at 4.5V gate drive and is housed in a miniature ChipFET surface mount package.
Mfr Part #:

NTHS5441T1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTHS5441T1G is a P-Channel MOSFET with a 20V drain-source voltage and 3.9A continuous drain current. It features a low Rds(on) of 46mOhm at 4.5V gate drive and is housed in a miniature ChipFET surface mount package.
✓ Total Stock: 7,204 pcs
$ Price Range: $0.99

NTHS5441T1G Available from 3 distributors

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✓ Non-Authorised
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2,975 pcs
2975 pcs On Request 1 On Request On Request N/A On Request On Request
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2,850 pcs
2850 pcs On Request 1 On Request On Request On Request On Request On Request
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1,379 pcs
1379 pcs On Request 1 On Request On Request 1014+ On Request On Request

NTHS5441T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTHS5441T1G Description

Short technical summary and product information.

The NTHS5441T1G from On Semiconductor is a P-Channel MOSFET designed for power management applications in portable and battery-powered products. It offers a drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 3.9A at 25°C ambient temperature.

 

Key electrical characteristics include a low on-state resistance (Rds(on)) of 46mOhm at a gate-source voltage (Vgs) of 4.5V, and a gate threshold voltage (Vgs(th)) of 1.2V maximum at 250µA. The device supports logic-level gate drive with drive voltages of 2.5V and 4.5V.

 

This MOSFET is packaged in a miniature ChipFET surface mount package, suitable for space-constrained designs. It operates within a temperature range of -55°C to 150°C (TJ). The higher efficiency and low Rds(on) contribute to extending battery life in applications such as cellular telephones and PCMCIA cards.

NTHS5441T1G Quick Information

Product Type: MOSFET
Canonical Name: NTHS5441T1G P-Channel MOSFET
Subcategory: P-Channel

NTHS5441T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTHS5441T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTHS5441T1G Features

  • P-Channel MOSFET with 20V drain-source voltage.
  • Continuous drain current of 3.9A.
  • Low Rds(on) of 46mOhm at 4.5V.
  • Miniature ChipFET surface mount package.
  • Logic level gate drive support.

NTHS5441T1G Applications

  • Power management in portable products.
  • Used in battery-powered devices.
  • Suitable for cellular telephones.
  • Applicable to PCMCIA cards.

NTHS5441T1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the NTHS5441T1G?

The maximum drain-source voltage is -20V.

What is the maximum gate to source voltage for this MOSFET?

The maximum gate to source voltage is ±12V.

What is the maximum gate threshold voltage (Vgs(th))?

-1.2V at 250µA.

What package does the NTHS5441T1G come in?

It is packaged in an 8-SMD, Flat Lead ChipFET package.

What is the operating temperature range of this device?

-55°C to 150°C.

Is the NTHS5441T1G RoHS compliant?

Yes, it is RoHS3 compliant.

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