NTHS5441T1 The ON Semiconductor NTHS5441T1 is a P-Channel MOSFET designed for power management in portable products. It features a -20V drain-source voltage and a 3.9A continuous drain current.
Mfr Part #:

NTHS5441T1

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTHS5441T1 is a P-Channel MOSFET designed for power management in portable products. It features a -20V drain-source voltage and a 3.9A continuous drain current.
✓ Total Stock: 3,907 pcs
$ Price Range: $0.99

NTHS5441T1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
907 pcs
907 pcs On Request 1 On Request On Request NDC On Request On Request

NTHS5441T1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

NTHS5441T1 Description

Short technical summary and product information.

The NTHS5441T1 from ON Semiconductor is a P-Channel MOSFET in a ChipFET package, suitable for power management applications in portable and battery-powered devices. It offers a drain-source voltage of -20V and a continuous drain current of up to -5.3A at 25°C.

 

Key electrical characteristics include a low on-state resistance (RDS(on)) as low as 46mOhm at 3.9A and 4.5V Vgs, and a gate threshold voltage (Vgs(th)) of -1.2V maximum. The device operates with a logic-level gate drive, enhancing efficiency and extending battery life.

 

This MOSFET is designed for surface mounting and comes in a miniature ChipFET package. It is rated for a maximum power dissipation of 2.5W at 25°C. The operating junction and storage temperature range is -55°C to +150°C.

 

Applications include power management in cellular and cordless telephones, and PCMCIA cards. The Pb-free package is available.

NTHS5441T1 Quick Information

Product Type: MOSFET
Series: NTHS5441T1
Canonical Name: NTHS5441T1 P-Channel MOSFET
Subcategory: Power MOSFETs

NTHS5441T1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free Package

NTHS5441T1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTHS5441T1 Features

  • P-Channel MOSFET for power management.
  • Rated for -20V drain-source voltage.
  • Continuous drain current up to 5.3A.
  • Low RDS(on) as low as 46mOhm.
  • Miniature ChipFET surface mount package.

NTHS5441T1 Applications

  • Power management in portable devices.
  • Used in cellular telephones.
  • Suitable for cordless telephones.
  • Applicable to PCMCIA cards.

NTHS5441T1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating for the NTHS5441T1?

The drain-source voltage (Vds) for the NTHS5441T1 is -20V.

What is the continuous drain current of the NTHS5441T1?

The continuous drain current (Id) is -5.3A at 25°C and -3.8A at 85°C.

What is the typical on-state resistance (RDS(on)) for this MOSFET?

The typical on-state resistance is 46mOhm at 3.9A and 4.5V Vgs.

What is the gate threshold voltage (Vgs(th)) of the NTHS5441T1?

The gate threshold voltage is a maximum of -1.2V at 250µA.

What is the operating temperature range for the NTHS5441T1?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is the NTHS5441T1 MOSFET in?

The NTHS5441T1 is in a ChipFET surface mount package.

Is the NTHS5441T1 RoHS compliant?

Yes, the NTHS5441T1 is RoHS3 Compliant.

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