| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
168,000 pcs
|
168000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
21,000 pcs
|
21000 pcs | On Request | 1 | On Request | On Request | 1846+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NTHS4166NT1G is a single N-Channel MOSFET designed for power applications. It utilizes trench technology for low conduction losses, offering an Rds(on) as low as 22mOhm at 10V gate-source voltage and 4.9A drain current. The device supports a maximum drain-to-source voltage of 30V and a gate-to-source voltage of ±20V.
This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in a leadless ChipFET™ package, which provides a 40% smaller footprint compared to TSOP-6 packages, making it suitable for space-constrained designs. The mounting type is surface mount.
Key electrical characteristics include an input capacitance of 900pF at 15V and a gate charge of 18nC at 10V. The device also features a body diode with a source current rating of 2.6A and an avalanche energy rating of 20mJ. The maximum power dissipation is rated at 800mW at 25°C ambient temperature.
Applications for the NTHS4166NT1G include load switching, DC-DC converters, and low-side switching. Its excellent thermal capabilities and compact package make it a versatile component for various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vds) for the NTHS4166NT1G is 30V.
The maximum continuous drain current (Id) is 4.9A at 25°C ambient temperature.
The Rds(on) is a maximum of 22mOhm at 4.9A drain current and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to 150°C.
The NTHS4166NT1G is in a ChipFET™ package, specifically an 8-SMD, Flat Lead type.