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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
160,000 pcs
|
160000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
12,000 pcs
|
12000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,357 pcs
|
1357 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Continuous Source Current (Is) | |
| Current | |
| Drain Current (Maximum @ 5 seconds) | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Maximum Lead Temperature for Soldering | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Pulsed Drain Current (Idm) | |
| Rds On (Max) @ Id, Vgs | |
| Resistance Drain Source On State (Typical @ -1.8 V) | |
| Resistance Drain Source On State (Typical @ -2.5 V) | |
| Resistance Drain Source On State (Typical @ -4.5 V) | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance Junction To Ambient (Typical @ Junction-to-Ambient, 5 sec) | |
| Thermal Resistance Junction To Ambient (Typical @ Junction-to-Ambient, Continuous) | |
| Total Power Dissipation (Maximum @ 5 sec) @ 85 °C) | |
| Total Power Dissipation (Maximum @ 5 sec) @ TA = 25 °C) | |
| Total Power Dissipation (Maximum @ Continuous @ 85 °C) | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTHS4101PT1G from On Semiconductor is a P-Channel MOSFET designed for power management applications. It features a maximum drain-to-source voltage of 20V and a continuous drain current of 4.8A. The device offers a low Rds(on) of 34mOhm at 4.8A and 4.5V Vgs, with a threshold voltage of 1.5V at 250µA.
This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in a ChipFET™ package, suitable for surface mounting, and has a low profile ideal for space-constrained designs. The device supports a gate-to-source voltage range of ±8V and has an input capacitance of 2100pF.
Applications include battery and load management in portable equipment, charge control in battery chargers, and buck and boost converters. The NTHS4101PT1G is Pb-free and RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NTHS4101PT1G is 20V.
The continuous drain current (Id) for the NTHS4101PT1G is 4.8A.
The Rds On is a maximum of 34mOhm at 4.8A and 4.5V Vgs.
The operating junction and storage temperature range is -55°C to 150°C.
The NTHS4101PT1G is available in a ChipFET™ package, suitable for surface mounting.
Yes, the NTHS4101PT1G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1.