| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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11,250 pcs
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11250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,319 pcs
|
1319 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTHL082N65S3F is a high-voltage N-Channel MOSFET from On Semiconductor, part of the SUPERFET III family. It utilizes charge balance technology for low on-resistance and reduced gate charge.
Key electrical specifications include a 650V drain-to-source voltage (VDSS) and a continuous drain current of 40A at 25°C. The maximum on-resistance (RDS(on)) is 82mOhm at 20A and 10V gate drive, with a typical on-resistance of 70mOhm. The gate charge (Qg) is typically 81nC at 10V.
This MOSFET is designed for applications requiring high efficiency and superior switching performance, such as telecom and industrial power supplies, EV chargers, and UPS systems. The FRFET variant offers optimized reverse recovery performance of the body diode.
Packaged in a TO-247-3 through-hole configuration, the NTHL082N65S3F operates within a temperature range of -55°C to +150°C. It has a maximum power dissipation of 313W at 25°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (VDSS) is 650V.
The continuous drain current is 40A at 25°C.
The typical on-resistance (RDS(on)) is 70 mOhm.
The operating temperature range is -55°C to +150°C.
It is supplied in a TO-247-3 package.
Yes, the NTHL082N65S3F is RoHS3 compliant.