NTHL080N120SC1 The ON Semiconductor NTHL080N120SC1 is an N-Channel Silicon Carbide MOSFET designed for high-performance applications. It features a 1200V drain-to-source voltage and a low on-resistance.
Mfr Part #:

NTHL080N120SC1

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTHL080N120SC1 is an N-Channel Silicon Carbide MOSFET designed for high-performance applications. It features a 1200V drain-to-source voltage and a low on-resistance.
✓ Total Stock: 2,803 pcs
$ Price Range: $8.64

NTHL080N120SC1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,803 pcs
1803 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

NTHL080N120SC1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTHL080N120SC1 Description

Short technical summary and product information.

The ON Semiconductor NTHL080N120SC1 is a high-performance N-Channel Silicon Carbide (SiC) MOSFET. It offers a maximum drain-to-source voltage (Vds) of 1200V and a low on-resistance (Rds(on)) of 110mOhm at 20A and 20V gate drive. The device boasts a typical gate charge (Qg) of 56 nC and an input capacitance (Ciss) of 1670 pF.

 

With a continuous drain current rating of 44A and a maximum power dissipation of 348W, this MOSFET is suitable for demanding applications. It operates within a junction temperature range of -55°C to 150°C. The component is housed in a TO-247-3 package and is designed for through-hole mounting.

 

Typical applications for the NTHL080N120SC1 include Uninterruptible Power Supplies (UPS), DC-DC converters, and boost inverters. Its Silicon Carbide technology provides advantages in efficiency and power density compared to traditional silicon MOSFETs.

NTHL080N120SC1 Quick Information

Product Type: MOSFET
Canonical Name: NTHL080N120SC1 N-Channel Silicon Carbide MOSFET
Subcategory: Single

NTHL080N120SC1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTHL080N120SC1 Estimated Pricing

Qty Low High
1+ $8.64 $8.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTHL080N120SC1 Features

  • 1200V drain-to-source voltage rating.
  • Low 110mOhm maximum on-resistance.
  • High 44A continuous drain current.
  • Silicon Carbide (SiC) technology.
  • TO-247-3 through-hole package.

NTHL080N120SC1 Applications

  • Suitable for high-voltage power switching applications.
  • Ideal for DC-DC converters and inverters.
  • Used in industrial motor control systems.
  • Applicable in uninterruptible power supplies (UPS).

NTHL080N120SC1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTHL080N120SC1?

The maximum drain-to-source voltage (Vds) is 1200 V.

What is the typical on-resistance of the NTHL080N120SC1?

The typical on-resistance (Rds(on)) is 80 mOhm.

What is the maximum continuous drain current?

The maximum continuous drain current is 44A.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the NTHL080N120SC1 supplied in?

The NTHL080N120SC1 is supplied in a TO-247-3 package.

Is this MOSFET RoHS compliant?

Yes, this device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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