NTHL060N090SC1 The ON Semiconductor NTHL060N090SC1 is a Silicon Carbide N-Channel MOSFET designed for high-performance applications. It features a 900V drain-to-source voltage and a continuous drain current of 46A.
Mfr Part #:

NTHL060N090SC1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTHL060N090SC1 is a Silicon Carbide N-Channel MOSFET designed for high-performance applications. It features a 900V drain-to-source voltage and a continuous drain current of 46A.
✓ Total Stock: 33,300 pcs
$ Price Range: $0.99

NTHL060N090SC1 Available from 1 distributor

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✓ Non-Authorised
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NTHL060N090SC1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTHL060N090SC1 Description

Short technical summary and product information.

The ON Semiconductor NTHL060N090SC1 is a high-performance Silicon Carbide (SiC) N-Channel MOSFET. It offers a maximum drain-to-source voltage of 900V and a continuous drain current of 46A at 25°C case temperature, with a power dissipation of 221W.

 

Key electrical characteristics include a typical on-resistance of 60 mOhm at 15V gate-to-source voltage and a typical output capacitance of 113 pF. The device operates within a junction temperature range of -55°C to 175°C.

 

Packaged in a TO-247-3 through-hole configuration, this MOSFET is suitable for applications requiring high efficiency and robust performance. Its SiC technology provides advantages over traditional silicon MOSFETs in terms of switching speed and thermal performance.

 

Typical applications include UPS systems, DC-DC converters, and boost inverters, where its high voltage and current capabilities are beneficial.

NTHL060N090SC1 Quick Information

Product Type: MOSFET
Canonical Name: NTHL060N090SC1 Silicon Carbide N-Channel MOSFET
Subcategory: N-Channel

NTHL060N090SC1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free 2LI

NTHL060N090SC1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTHL060N090SC1 Features

  • 900V drain-to-source voltage rating.
  • 46A continuous drain current.
  • 60 mOhm typical on-resistance.
  • Silicon Carbide (SiC) technology.
  • TO-247-3 through-hole package.

NTHL060N090SC1 Applications

  • High-voltage power supply circuits
  • Motor control and inverter drives
  • Industrial power switching applications
  • Transient load handling in power electronics

NTHL060N090SC1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTHL060N090SC1?

The maximum drain-to-source voltage (Vdss) is 900 V.

What is the typical on-resistance of the NTHL060N090SC1 at 15V gate voltage?

The typical on-resistance (RDS(on)) is 60 mOhm when the gate-to-source voltage (VGS) is 15 V.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the NTHL060N090SC1 supplied in?

The device is supplied in a TO-247-3 package.

Is the NTHL060N090SC1 RoHS compliant?

The RoHS status is listed as RoHS3 Compliant.

What is the typical output capacitance (Coss) of the NTHL060N090SC1?

The typical output capacitance (Coss) is 113 pF.

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