| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,350 pcs
|
1350 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,321 pcs
|
1321 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTHL050N65S3HF is a power MOSFET from ON Semiconductor, featuring the SUPERFET III technology. This N-Channel MOSFET is designed for high voltage applications with a drain-source voltage rating of 650V.
Key electrical characteristics include a continuous drain current of 58A at 25°C and a maximum on-resistance (Rds On) of 50mOhm at 29A and 10V gate drive voltage. It boasts a low gate charge (Qg) of 125 nC typical and a low effective output capacitance (Coss(eff.)) of 1051 pF typical, contributing to superior switching performance.
This device is suitable for various power systems requiring miniaturization and higher efficiency, such as Telecom/Server Power Supplies, Industrial Power Supplies, EV Chargers, and UPS/Solar applications. The optimized reverse recovery performance of its body diode can improve system reliability.
The MOSFET is housed in a TO-247-3 package and supports through-hole mounting. It operates within a temperature range of -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 650 V.
The continuous drain current (Id) at 25°C is 58 A.
The Rds On is a maximum of 50mOhm at 29A drain current and 10V gate-source voltage.
The typical gate charge (Qg) is 125 nC at 10V gate-source voltage.
The MOSFET is supplied in a TO-247-3 package.
The operating temperature range is -55°C to +150°C (TJ).
Yes, the device is RoHS3 Compliant.