NTHL045N065SC1 The ON Semiconductor NTHL045N065SC1 is a Silicon Carbide (SiC) N-Channel MOSFET. It features a 650V drain-source voltage and a low on-resistance.
Mfr Part #:

NTHL045N065SC1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTHL045N065SC1 is a Silicon Carbide (SiC) N-Channel MOSFET. It features a 650V drain-source voltage and a low on-resistance.
✓ Total Stock: 3,600 pcs
$ Price Range: $0.99

NTHL045N065SC1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,600 pcs
3600 pcs On Request 1 On Request On Request On Request On Request On Request

NTHL045N065SC1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTHL045N065SC1 Description

Short technical summary and product information.

The ON Semiconductor NTHL045N065SC1 is a high-performance Silicon Carbide (SiC) N-Channel MOSFET designed for demanding applications. It offers a 650V drain-to-source voltage and a low typical on-resistance of 50mOhm at 25A and 18V gate-source voltage.

 

Key electrical characteristics include a gate charge of 105 nC at 18V and an input capacitance of 1870 pF at 325V. The device can handle a continuous drain current of 66A at 25°C and a maximum power dissipation of 291W at 25°C.

 

Operating across a wide temperature range from -55°C to 175°C, this MOSFET is suitable for applications such as Switching Mode Power Supplies (SMPS), solar inverters, UPS, and energy storage systems. It is housed in a TO-247-3 package with through-hole mounting.

 

The NTHL045N065SC1 is RoHS compliant and Halide-free, making it a reliable choice for modern power electronics designs.

NTHL045N065SC1 Quick Information

Product Type: MOSFET
Canonical Name: NTHL045N065SC1 Silicon Carbide MOSFET
Subcategory: SiC MOSFET

NTHL045N065SC1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free 2LI

NTHL045N065SC1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTHL045N065SC1 Features

  • 650V drain-source voltage rating.
  • Low 50mOhm max on-resistance.
  • High 66A continuous drain current.
  • Wide -55°C to 175°C operating temperature.
  • TO-247-3 package for through-hole mounting.

NTHL045N065SC1 Applications

  • Suitable for SMPS applications.
  • Ideal for solar inverter designs.
  • Used in UPS systems.
  • Applicable for energy storage solutions.

NTHL045N065SC1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTHL045N065SC1?

The maximum drain-to-source voltage (Vdss) is 650 V.

What is the typical on-resistance of the NTHL045N065SC1 at 18V gate-source voltage?

The typical on-resistance (Rds(on)) is 32 mOhm at a gate-source voltage of 18V.

What is the continuous drain current rating at 25°C?

The continuous drain current is 66A at 25°C.

What is the operating temperature range for this MOSFET?

The operating junction temperature range is -55°C to 175°C.

What package type is the NTHL045N065SC1 supplied in?

The device is supplied in a TO-247-3 package.

Is the NTHL045N065SC1 RoHS compliant?

Yes, the NTHL045N065SC1 is RoHS3 Compliant.

Home
Account

Categories