| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,120 pcs
|
3120 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,250 pcs
|
2250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
26 pcs
|
26 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTHL040N65S3F from On Semiconductor is a high-voltage, N-Channel SUPERFET III FRFET MOSFET designed for efficiency and performance in power systems. It utilizes charge balance technology for low on-resistance and reduced gate charge.
Key electrical specifications include a drain-to-source voltage (Vdss) of 650V, a continuous drain current (Id) of 65A at 25°C, and a maximum on-resistance (Rds On) of 40mOhm at 32.5A and 10V gate drive. The device boasts a low gate charge (Qg) of 198nC and an input capacitance (Ciss) of 5940pF.
This MOSFET operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 446W at 25°C. It is housed in a TO-247-3 package and features a through-hole mounting type.
Applications for the NTHL040N65S3F include telecom and server power supplies, industrial power supplies, EV chargers, and UPS systems. Its optimized reverse recovery performance of the body diode can enhance system reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 650 V.
The continuous drain current is 65 A at 25°C and 45 A at 100°C.
The Rds On is a maximum of 40mOhm when the drain current is 32.5A and the gate-source voltage is 10V.
The operating and storage temperature range is -55°C to 150°C.
The MOSFET is supplied in a TO-247-3 package.