NTHL040N120SC1 The On Semiconductor NTHL040N120SC1 is a Silicon Carbide (SiC) N-Channel MOSFET designed for high-voltage applications. It features a 1200V drain-to-source voltage and a maximum continuous drain current of 60A.
Mfr Part #:

NTHL040N120SC1

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTHL040N120SC1 is a Silicon Carbide (SiC) N-Channel MOSFET designed for high-voltage applications. It features a 1200V drain-to-source voltage and a maximum continuous drain current of 60A.
Total Stock: 10,923 pcs
$ Price Range: $0.99

NTHL040N120SC1 Available from 2 distributors

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9,900 pcs
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1,023 pcs
1023 pcs On Request 1 On Request On Request On Request On Request On Request

NTHL040N120SC1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTHL040N120SC1 Description

Short technical summary and product information.

This NTHL040N120SC1 is a Silicon Carbide (SiC) N-Channel MOSFET from On Semiconductor, part of the EliteSiC family. It is rated for a drain-to-source voltage (Vdss) of 1200V and offers a maximum continuous drain current of 60A at 25°C case temperature. The device exhibits a low on-resistance, with a maximum of 56 mOhm at 35A and 20V gate drive.

 

Key electrical characteristics include a typical gate charge (Qg) of 106 nC and a typical output capacitance (Coss) of 140 pF. The gate threshold voltage (Vgs(th)) has a maximum of 4.3V at 10mA. The MOSFET operates within a junction temperature range of -55°C to +175°C.

 

Packaged in a TO-247-3LD, this component is suitable for through-hole mounting. Its technology utilizes Silicon Carbide, offering advantages in high-power and high-frequency applications. The device is also RoHS compliant and Halide free.

 

Typical applications for this MOSFET include UPS systems, DC-DC converters, and boost inverters, where its high voltage and current capabilities are beneficial.

NTHL040N120SC1 Quick Information

Product Type: MOSFET
Canonical Name: NTHL040N120SC1 Silicon Carbide (SiC) N-Channel MOSFET
Subcategory: N-Channel

NTHL040N120SC1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free 2LI

NTHL040N120SC1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTHL040N120SC1 Features

  • 1200V drain-to-source voltage rating.
  • 60A maximum continuous drain current.
  • 56mOhm maximum on-resistance.
  • 106nC typical gate charge.
  • TO-247-3 package for through-hole mounting.

NTHL040N120SC1 Applications

  • High-voltage power switching circuits
  • Industrial power conversion systems
  • Motor drive inverters
  • High-voltage switching applications

NTHL040N120SC1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTHL040N120SC1?

The maximum drain-to-source voltage (Vdss) is 1200 V.

What is the maximum continuous drain current of the NTHL040N120SC1?

The maximum continuous drain current is 60 A at 25°C case temperature.

What is the typical on-resistance for the NTHL040N120SC1?

The typical on-resistance is 40 mOhm.

What is the package type for the NTHL040N120SC1?

The component is supplied in a TO-247-3 package.

What is the operating temperature range for this MOSFET?

The operating junction temperature range is -55°C to +175°C.

Is the NTHL040N120SC1 RoHS compliant?

Yes, the device is RoHS3 Compliant.

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