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NTHL040N120M3S The ON Semiconductor NTHL040N120M3S is an N-Channel Silicon Carbide FET designed for high-performance applications. It features a 1200V drain-to-source voltage and 187A continuous drain current.
Mfr Part #:

NTHL040N120M3S

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTHL040N120M3S is an N-Channel Silicon Carbide FET designed for high-performance applications. It features a 1200V drain-to-source voltage and 187A continuous drain current.
✓ Total Stock: 285,430 pcs
$ Price Range: $0.99

NTHL040N120M3S Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
284,400 pcs
On Request
284400 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
1,030 pcs
On Request
1030 pcs On Request 1 On Request On Request On Request On Request On Request
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NTHL040N120M3S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Drain to Source Voltage (Vdss)
FET Type
Mounting Type
Operating Temperature
Supplier Device Package
Technology
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NTHL040N120M3S Description

Short technical summary and product information.

The ON Semiconductor NTHL040N120M3S is an N-Channel Silicon Carbide Field-Effect Transistor (FET) designed for demanding applications. This device boasts a high drain-to-source voltage (Vdss) of 1200V and a continuous drain current (Id) of 187A at 25°C.

 

Operating within a wide temperature range of -55°C to 175°C, the NTHL040N120M3S utilizes advanced SiC FET technology for enhanced performance and efficiency. It is packaged in a TO-263-8, D²Pak (7 Leads + Tab), TO-263CA format, suitable for surface mount assembly.

 

This FET is active and compliant with ROHS3 standards. Its robust construction and high voltage/current capabilities make it suitable for various power electronics designs.

NTHL040N120M3S Quick Information

Product Type: N-Channel SiC FET
Series: NTHL040N120M3S
Canonical Name: NTHL040N120M3S N-Channel SiC FET
Subcategory: MOSFET

NTHL040N120M3S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTHL040N120M3S Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTHL040N120M3S Features

  • 1200V drain-to-source voltage rating.
  • 187A continuous drain current capability.
  • N-Channel SiC FET technology.
  • Surface mount TO-263 package.
  • Wide operating temperature range.

NTHL040N120M3S Applications

  • Suitable for high-voltage power systems.
  • Ideal for efficient power conversion.
  • Used in demanding electronic circuits.
  • Designed for robust performance.

NTHL040N120M3S FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NTHL040N120M3S?

The drain-to-source voltage (Vdss) is 1200 V.

What is the continuous drain current at 25°C?

The continuous drain current (Id) at 25°C is 187 A.

What is the operating temperature range for this FET?

The operating temperature range is -55°C to 175°C.

What type of FET is the NTHL040N120M3S?

It is an N-Channel FET.

What technology does the NTHL040N120M3S use?

It uses SiCFET (Silicon Carbide) technology.

What package is the NTHL040N120M3S supplied in?

It is supplied in a TO-263-8, D²Pak (7 Leads + Tab), TO-263CA package.

How is the NTHL040N120M3S mounted?

It is a surface mount device.

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