| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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70 pcs
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70 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor NTHL033N65S3HF is a high-performance N-Channel MOSFET from the SUPERFET III family, designed for power applications requiring high efficiency and reliability. It boasts a 650V drain-source breakdown voltage and can handle a continuous drain current of 70A at 25°C case temperature.
Key electrical characteristics include a maximum Rds(on) of 33mOhm at 10V gate-source voltage and 35A drain current, along with a typical gate charge of 188nC. The device also features a low effective output capacitance and optimized reverse recovery performance of its body diode.
This MOSFET is suitable for various power systems, including Telecom/Server Power Supplies, Industrial Power Supplies, EV Chargers, and UPS/Solar applications. Its robust design and performance characteristics make it a strong choice for miniaturization and efficiency improvements in power designs.
The NTHL033N65S3HF is supplied in a TO-247-3 package, designed for through-hole mounting, facilitating integration into power electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating (Vds) for the NTHL033N65S3HF is 650V.
The continuous drain current (Id) for the NTHL033N65S3HF is 70A at 25°C case temperature.
The typical Rds(on) for the NTHL033N65S3HF is 28mOhm.
The operating temperature range for the NTHL033N65S3HF is -55°C to 150°C (TJ).
The NTHL033N65S3HF is supplied in a TO-247-3 package.