| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,035 pcs
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1035 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Tape & Reel | |
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| Vgs (Max) | |
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The On Semiconductor NTHL025N065SC1 is a high-performance Silicon Carbide (SiC) N-Channel MOSFET designed for demanding applications. It offers a 650V drain-to-source voltage (VDSS) and a low on-resistance (RDS(on)) of 28.5mOhm at 45A and 18V gate-to-source voltage. The device also exhibits a typical RDS(on) of 19mOhm at 18V and 25mOhm at 15V.
Key electrical characteristics include a maximum gate charge (Qg) of 164 nC at 18V and an output capacitance (Coss) of 278 pF. The MOSFET can handle a continuous drain current of 99A at 25°C case temperature and a maximum power dissipation of 348W at 25°C.
Packaged in a TO-247-3 lead package, this through-hole component is suitable for applications requiring high efficiency and reliability. The operating temperature range is -55°C to 175°C (TJ). Typical applications include Switching Mode Power Supplies (SMPS), Solar Inverters, Uninterruptable Power Supplies (UPS), and Energy Storage systems.
This device is Halide Free and Pb-Free 2LI compliant, with RoHS3 compliance and MSL 1 rating.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (VDSS) is 650 V.
The typical on-resistance (RDS(on)) is 19 mOhm at a gate-to-source voltage of 18V.
The maximum continuous drain current is 99A at a case temperature of 25°C.
The NTHL025N065SC1 is supplied in a TO-247-3 lead package.
The operating junction temperature range is -55°C to 175°C.
Yes, the NTHL025N065SC1 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1.