NTHL020N120SC1 The On Semiconductor NTHL020N120SC1 is a Silicon Carbide (SiC) N-Channel MOSFET designed for high-performance applications. It offers a 1200V drain-source voltage and 103A continuous current.
Mfr Part #:

NTHL020N120SC1

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTHL020N120SC1 is a Silicon Carbide (SiC) N-Channel MOSFET designed for high-performance applications. It offers a 1200V drain-source voltage and 103A continuous current.
✓ Total Stock: 8,285 pcs
$ Price Range: $54.69

NTHL020N120SC1 Available from 3 distributors

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✓ Non-Authorised
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4,500 pcs
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2,742 pcs
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NTHL020N120SC1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTHL020N120SC1 Description

Short technical summary and product information.

The NTHL020N120SC1 from On Semiconductor is an EliteSiC MOSFET featuring an N-Channel configuration. This device is engineered for demanding applications requiring high voltage and current handling capabilities. It boasts a maximum drain-to-source voltage (Vdss) of 1200V and a continuous drain current (Id) of 103A at 25°C case temperature.

 

Key electrical characteristics include a low typical on-resistance (Rds(on)) of 20 mOhm at 60A and 20V gate-source voltage, an ultra-low total gate charge (Qg(tot)) of 203 nC, and an output capacitance (Coss) of 260 pF. The device operates within a junction temperature range of -55°C to 175°C.

 

Packaged in a TO-247-3LD through-hole configuration, the NTHL020N120SC1 is suitable for various power electronics systems. Its Silicon Carbide technology provides superior performance compared to traditional silicon-based MOSFETs, including higher efficiency and better thermal characteristics.

 

Typical applications for this MOSFET include UPS systems, DC-DC converters, and boost inverters, where its robust specifications and advanced technology can significantly enhance system performance and reliability.

NTHL020N120SC1 Quick Information

Product Type: MOSFET
Canonical Name: NTHL020N120SC1 Silicon Carbide MOSFET
Subcategory: N-Channel

NTHL020N120SC1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free 2LI

NTHL020N120SC1 Estimated Pricing

Qty Low High
1+ $54.69 $54.69

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTHL020N120SC1 Features

  • 1200V drain-source voltage rating.
  • 103A continuous drain current.
  • Low 20mOhm Rds(on) typical.
  • Ultra-low 203nC gate charge.
  • TO-247-3 through-hole package.

NTHL020N120SC1 Applications

  • Ideal for UPS systems.
  • Used in DC-DC converters.
  • Suitable for boost inverters.
  • High-performance power applications.

NTHL020N120SC1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTHL020N120SC1?

The maximum drain-to-source voltage (Vdss) is 1200 V.

What is the continuous drain current at 25°C?

The continuous drain current at 25°C is 103 A.

What is the typical Rds(on) for this MOSFET?

The typical Rds(on) is 20 mOhm at 60A and 20V.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the NTHL020N120SC1 supplied in?

It is supplied in a TO-247-3LD package for through-hole mounting.

Is this device RoHS compliant?

Yes, this device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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