NTHL020N090SC1 The On Semiconductor NTHL020N090SC1 is a Silicon Carbide N-Channel MOSFET designed for high-performance applications. It offers a 900V drain-to-source voltage and a continuous drain current of 118A.
Mfr Part #:

NTHL020N090SC1

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTHL020N090SC1 is a Silicon Carbide N-Channel MOSFET designed for high-performance applications. It offers a 900V drain-to-source voltage and a continuous drain current of 118A.
✓ Total Stock: 3,620 pcs
$ Price Range: $0.99

NTHL020N090SC1 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

NTHL020N090SC1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTHL020N090SC1 Description

Short technical summary and product information.

The NTHL020N090SC1 from On Semiconductor is a high-performance Silicon Carbide (SiC) N-Channel MOSFET. It features a maximum drain-to-source voltage (Vdss) of 900V and a continuous drain current of 118A at 25°C case temperature.

 

This MOSFET boasts a low on-resistance (RDS(on)) of 28mOhm at 60A and 15V gate-source voltage, with a typical RDS(on) of 20mOhm at 15V VGS. The ultra-low gate charge (Qg) of 196nC and low effective output capacitance (Coss) of 296pF contribute to efficient switching performance.

 

Designed for demanding applications, the NTHL020N090SC1 operates within a junction temperature range of -55°C to 175°C. It is housed in a TO-247-3LD package, suitable for through-hole mounting.

 

Typical applications include Uninterruptible Power Supplies (UPS), DC-DC converters, and boost inverters. The device is RoHS 3 compliant and Halide Free.

NTHL020N090SC1 Quick Information

Product Type: MOSFET
Series: NTHL020N090SC1
Canonical Name: NTHL020N090SC1 Silicon Carbide N-Channel MOSFET
Subcategory: N-Channel

NTHL020N090SC1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free 2LI

NTHL020N090SC1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTHL020N090SC1 Features

  • 900V drain-to-source voltage rating.
  • 118A continuous drain current capability.
  • Low 28mOhm maximum Rds(on).
  • Ultra-low 196nC total gate charge.
  • TO-247-3LD through-hole package.

NTHL020N090SC1 Applications

  • Ideal for UPS systems.
  • Suitable for DC-DC converters.
  • Used in boost inverter designs.
  • High-voltage power applications.

NTHL020N090SC1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTHL020N090SC1?

The maximum drain-to-source voltage (Vdss) is 900 V.

What is the typical on-resistance of the NTHL020N090SC1 at 15V gate-source voltage?

The typical on-resistance (RDS(on)) is 20 mOhm at VGS = 15 V.

What is the continuous drain current rating for the NTHL020N090SC1?

The continuous drain current is 118 A at a case temperature of 25°C.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the NTHL020N090SC1 supplied in?

It is supplied in a TO-247-3LD package.

Is the NTHL020N090SC1 RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NTHL020N090SC1?

The Moisture Sensitivity Level is 1.

Home
Account

Categories