NTHD4P02FT1G The ON Semiconductor NTHD4P02FT1G is a P-Channel MOSFET designed for 20V operation with a current rating of 2.2A. It features a low on-resistance and is available in a surface mount package.
Mfr Part #:

NTHD4P02FT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTHD4P02FT1G is a P-Channel MOSFET designed for 20V operation with a current rating of 2.2A. It features a low on-resistance and is available in a surface mount package.
✓ Total Stock: 260,643 pcs
$ Price Range: $0.99

NTHD4P02FT1G Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
257,443 pcs
257443 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,200 pcs
3200 pcs On Request 1 On Request On Request 11+ On Request On Request

NTHD4P02FT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTHD4P02FT1G Description

Short technical summary and product information.

The NTHD4P02FT1G from ON Semiconductor is a P-Channel MOSFET with a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 2.2A. This device utilizes MOSFET technology and is suitable for various applications requiring efficient power switching.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 155mOhm at 2.2A and 4.5V Vgs. The gate charge (Qg) is 6 nC at 4.5V, and the input capacitance (Ciss) is 300 pF at 10V Vds. The gate threshold voltage (Vgs(th)) is a maximum of 1.2V at 250µA.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1.1W (Tj). It is packaged in a surface mount 8-SMD, Flat Lead configuration, identified as ChipFET™ by the supplier.

 

The NTHD4P02FT1G is RoHS3 compliant and has an MSL rating of 1.

NTHD4P02FT1G Quick Information

Product Type: MOSFET
Canonical Name: NTHD4P02FT1G P-Channel MOSFET
Subcategory: P-Channel

NTHD4P02FT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTHD4P02FT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTHD4P02FT1G Features

  • P-Channel MOSFET with 20V drain-source voltage.
  • Continuous drain current rating of 2.2A.
  • Maximum on-resistance of 155mOhm at 2.2A.
  • Surface mount 8-SMD, Flat Lead package.
  • Operates from -55°C to 150°C.

NTHD4P02FT1G Applications

  • Used in load switching circuits
  • Suitable for power management applications
  • Ideal for high-speed switching
  • Applicable in automotive and industrial circuits

NTHD4P02FT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NTHD4P02FT1G?

The maximum drain-source voltage (Vdss) for the NTHD4P02FT1G is 20V.

What is the continuous drain current rating of the NTHD4P02FT1G?

The NTHD4P02FT1G has a continuous drain current rating of 2.2A.

What is the maximum on-resistance of the NTHD4P02FT1G?

The maximum on-resistance (Rds On) for the NTHD4P02FT1G is 155mOhm when measured at 2.2A drain current and 4.5V gate-source voltage.

What type of package is the NTHD4P02FT1G in?

The NTHD4P02FT1G is in an 8-SMD, Flat Lead package, referred to as ChipFET™ by the supplier.

What is the operating temperature range for this MOSFET?

The operating temperature range for the NTHD4P02FT1G is -55°C to 150°C (TJ).

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