NTHD4401PT3G The On Semiconductor NTHD4401PT3G is a dual P-Channel MOSFET designed for battery and load management in portable equipment. It features a 20V drain-to-source voltage and a 2.1A continuous drain current.
Mfr Part #:

NTHD4401PT3G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTHD4401PT3G is a dual P-Channel MOSFET designed for battery and load management in portable equipment. It features a 20V drain-to-source voltage and a 2.1A continuous drain current.
✓ Total Stock: 1,177 pcs
$ Price Range: $0.99

NTHD4401PT3G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,177 pcs
1177 pcs On Request 1 On Request On Request 0611+ On Request On Request

NTHD4401PT3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

NTHD4401PT3G Description

Short technical summary and product information.

The NTHD4401PT3G from On Semiconductor is a dual P-Channel MOSFET housed in a compact ChipFET package. This device is optimized for battery and load management applications in portable electronics such as MP3 players, cell phones, and digital cameras.

 

Key electrical specifications include a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 2.1A at 25°C. The MOSFET offers a low on-resistance (Rds(on)) of 155mOhm at 2.1A and 4.5V Vgs, along with a gate threshold voltage (Vgs(th)) of 1.2V at 250µA. Its input capacitance (Ciss) is 300pF at 10V, and gate charge (Qg) is 6nC at 4.5V.

 

The ChipFET package provides excellent thermal capabilities and a smaller footprint compared to TSOP-6 packages. It is suitable for surface mounting and operates within a temperature range of -55°C to 150°C (TJ). The device is Pb-Free compliant.

 

Applications include charge control in battery chargers and DC-DC converters (buck and boost).

NTHD4401PT3G Quick Information

Product Type: MOSFET
Series: NTHD4401PT3G
Canonical Name: NTHD4401PT3G Dual P-Channel MOSFET
Subcategory: P-Channel

NTHD4401PT3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTHD4401PT3G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTHD4401PT3G Features

  • Dual P-Channel MOSFET configuration.
  • 20V drain-to-source voltage rating.
  • 2.1A continuous drain current.
  • Low Rds(on) of 155mOhm.
  • Compact ChipFET package.

NTHD4401PT3G Applications

  • Charge control in battery chargers.
  • Battery and load management.
  • Portable electronic devices.
  • DC-DC converters.

NTHD4401PT3G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage (Vdss) for the NTHD4401PT3G?

The drain-to-source voltage (Vdss) is 20V.

What is the continuous drain current (Id) for the NTHD4401PT3G?

The continuous drain current (Id) is 2.1A at 25°C.

What is the Rds(on) of the NTHD4401PT3G?

The Rds(on) is a maximum of 155mOhm at 2.1A and 4.5V Vgs.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What type of package is the NTHD4401PT3G in?

The NTHD4401PT3G is in a ChipFET package.

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