| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The NTHD4401PT1G from On Semiconductor is a dual P-channel MOSFET housed in a compact ChipFET package. This device is optimized for battery and load management applications in portable electronics such as MP3 players, cell phones, and digital cameras.
Key electrical characteristics include a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 2.1A at 25°C. The Rds On is specified at a maximum of 155mOhm at 2.1A and 4.5V Vgs. It also features a logic level gate and a gate charge of 6nC.
The ChipFET package offers a 40% smaller footprint than TSOP-6 and provides excellent thermal capabilities. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for charge control in battery chargers and DC-DC converters.
This component is available in a RoHS3 compliant package. The mounting type is surface mount.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NTHD4401PT1G is 20V.
The continuous drain current is 2.1A at 25°C and 1.5A at 85°C.
The Rds On is a maximum of 155mOhm at 2.1A and 4.5V Vgs.
The operating junction and storage temperature range is -55°C to 150°C.
The NTHD4401PT1G is in a ChipFET package.